DMT68M8LFV-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 60V 54.1A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.47 EUR |
| 6000+ | 0.45 EUR |
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Technische Details DMT68M8LFV-7 Diodes Incorporated
Description: MOSFET N-CH 60V 54.1A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V, Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V.
Weitere Produktangebote DMT68M8LFV-7 nach Preis ab 0.44 EUR bis 1.23 EUR
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DMT68M8LFV-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS 41V-60V |
auf Bestellung 1365 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT68M8LFV-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 54.1A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V |
auf Bestellung 7353 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT68M8LFV-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 54.1A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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| DMT68M8LFV-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 43.3A; Idm: 210A; 2.7W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Drain current: 43.3A Drain-source voltage: 60V Power dissipation: 2.7W Polarisation: unipolar Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 210A On-state resistance: 13.3mΩ Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| DMT68M8LFV-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 43.3A; Idm: 210A; 2.7W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Drain current: 43.3A Drain-source voltage: 60V Power dissipation: 2.7W Polarisation: unipolar Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 210A On-state resistance: 13.3mΩ |
Produkt ist nicht verfügbar |