Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75526) > Seite 1121 nach 1259
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DMN2027USS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 10.7A; Idm: 45A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 10.7A Pulsed drain current: 45A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 19mΩ Mounting: SMD Gate charge: 11.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
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| DMN2028UFDF-13 | DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W Type of transistor: N-MOSFET Case: U-DFN2020-6 Mounting: SMD Power dissipation: 1.31W Kind of package: reel; tape Pulsed drain current: 40A On-state resistance: 95mΩ Drain-source voltage: 20V Polarisation: unipolar Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±8V Drain current: 7.5A Anzahl je Verpackung: 10000 Stücke |
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| DMN2028UFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.5A Pulsed drain current: 40A Power dissipation: 1.31W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 95mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| DMN2028UFDH-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7A; Idm: 40A; 1.5W; V-DFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7A Pulsed drain current: 40A Power dissipation: 1.5W Case: V-DFN3030-8 Gate-source voltage: ±12V On-state resistance: 36mΩ Mounting: SMD Gate charge: 8.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| DMN2028UFU-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.9A; Idm: 40A; 1.8W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.9A Pulsed drain current: 40A Power dissipation: 1.8W Case: U-DFN2030-6 Gate-source voltage: ±10V On-state resistance: 30mΩ Mounting: SMD Gate charge: 18.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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DMN2028USS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.3A; 12.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.3A Power dissipation: 12.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 28mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
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DMN2028UVT-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; Idm: 40A; 1.6W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.2A Pulsed drain current: 40A Power dissipation: 1.6W Case: TSOT26 Gate-source voltage: ±8V On-state resistance: 32mΩ Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
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DMN2029USD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; 0.7W; SO8 Polarisation: unipolar On-state resistance: 35mΩ Kind of package: reel; tape Drain current: 4.8A Drain-source voltage: 20V Case: SO8 Kind of channel: enhanced Gate-source voltage: ±8V Type of transistor: N-MOSFET x2 Mounting: SMD Power dissipation: 0.7W Anzahl je Verpackung: 1 Stücke |
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| DMN2036UCB4-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 4A; Idm: 30A; 1.45W Mounting: SMD Case: X2-WLB1616-4 Kind of package: reel; tape Gate charge: 12.6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 30A Drain-source voltage: 24V Drain current: 4A On-state resistance: 52mΩ Type of transistor: N-MOSFET Power dissipation: 1.45W Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke |
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DMN2040LTS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 30A; 890mW; TSSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.9A Pulsed drain current: 30A Power dissipation: 0.89W Case: TSSOP8 Gate-source voltage: ±12V On-state resistance: 36mΩ Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2245 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN2040U-13 | DIODES INCORPORATED |
DMN2040U-13 SMD N channel transistors |
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| DMN2040U-7 | DIODES INCORPORATED |
DMN2040U-7 SMD N channel transistors |
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DMN2041L-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.5A; Idm: 30A; 780mW; SOT23 Polarisation: unipolar Kind of package: reel; tape Gate charge: 15.6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 30A Mounting: SMD Case: SOT23 Drain-source voltage: 20V Drain current: 4.5A On-state resistance: 41mΩ Type of transistor: N-MOSFET Power dissipation: 0.78W Anzahl je Verpackung: 5 Stücke |
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DMN2041LSD-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.92A; Idm: 30A; 1.16W; SO8 Polarisation: unipolar On-state resistance: 41mΩ Kind of package: reel; tape Drain current: 4.92A Drain-source voltage: 20V Case: SO8 Gate charge: 15.6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 30A Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 1.16W Anzahl je Verpackung: 1 Stücke |
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| DMN2041UFDB-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 20A; 2.2W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: 20A Drain-source voltage: 20V Drain current: 4.9A On-state resistance: 65mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±12V Anzahl je Verpackung: 3000 Stücke |
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| DMN2044UCB4-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 16A; 1.18W Mounting: SMD Case: U-WLB1010-4 Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 16A Drain-source voltage: 20V Drain current: 3.6A On-state resistance: 70mΩ Type of transistor: N-MOSFET Power dissipation: 1.18W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
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DMN2046U-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; Idm: 18A; 1.26W; SOT23 Kind of package: reel; tape Pulsed drain current: 18A Power dissipation: 1.26W Gate charge: 3.8nC Polarisation: unipolar Drain current: 2.7A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Case: SOT23 On-state resistance: 0.11Ω Gate-source voltage: ±12V Mounting: SMD Anzahl je Verpackung: 10000 Stücke |
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DMN2046U-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; 0.76W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.7A Power dissipation: 0.76W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke |
auf Bestellung 1655 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN2050L-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.9A; 1.4W; SOT23 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±12V Case: SOT23 On-state resistance: 0.1Ω Power dissipation: 1.4W Polarisation: unipolar Drain current: 5.9A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMN2050LFDB-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 25A; 900mW Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.6A On-state resistance: 55mΩ Type of transistor: N-MOSFET Power dissipation: 0.9W Kind of package: reel; tape Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 25A Mounting: SMD Case: U-DFN2020-6 Anzahl je Verpackung: 10000 Stücke |
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| DMN2050LFDB-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.1A; 0.73W; U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±12V Case: U-DFN2020-6 On-state resistance: 55mΩ Power dissipation: 0.73W Polarisation: unipolar Drain current: 4.1A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET x2 Anzahl je Verpackung: 1 Stücke |
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DMN2053U-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 0.8W; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.4A Pulsed drain current: 22A Power dissipation: 0.8W Case: SOT23-3 Gate-source voltage: ±12V On-state resistance: 91mΩ Mounting: SMD Gate charge: 4.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
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DMN2053U-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 1.3W; SOT23 Power dissipation: 1.3W Kind of package: reel; tape Case: SOT23 Mounting: SMD Drain-source voltage: 20V Drain current: 5.4A On-state resistance: 91mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 4.6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 22A Anzahl je Verpackung: 5 Stücke |
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DMN2053UVT-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; Idm: 22A; 1.1W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.7A Pulsed drain current: 22A Power dissipation: 1.1W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 56mΩ Mounting: SMD Gate charge: 3.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
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DMN2053UW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 1.3W; SOT23 Power dissipation: 1.3W Kind of package: reel; tape Case: SOT23 Mounting: SMD Drain-source voltage: 20V Drain current: 5.4A On-state resistance: 91mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 4.6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 22A Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMN2053UWQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; Idm: 20A; 0.47W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.3A Pulsed drain current: 20A Power dissipation: 0.47W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 3.6nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 5 Stücke |
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DMN2055U-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.8A Pulsed drain current: 25A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 45mΩ Mounting: SMD Gate charge: 4.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
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DMN2055U-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.8A Pulsed drain current: 25A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 45mΩ Mounting: SMD Gate charge: 4.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
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DMN2056U-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 22A; 940mW; SOT23 Polarisation: unipolar Power dissipation: 0.94W Kind of package: reel; tape Gate charge: 4.3nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 22A Mounting: SMD Case: SOT23 Drain-source voltage: 20V Drain current: 3.2A On-state resistance: 85mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 10000 Stücke |
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DMN2056U-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23 Polarisation: unipolar Power dissipation: 0.94W Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: SOT23 Drain-source voltage: 20V Drain current: 3.7A On-state resistance: 45mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3025 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN2058U-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; Idm: 24A; 1.13W; SOT23 Case: SOT23 Drain-source voltage: 20V Drain current: 3.7A On-state resistance: 91mΩ Type of transistor: N-MOSFET Power dissipation: 1.13W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7.7nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 24A Mounting: SMD Anzahl je Verpackung: 10000 Stücke |
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DMN2058U-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.3A; 0.74W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.3A Power dissipation: 0.74W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 40mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN2058UW-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3A; Idm: 20A; 700mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3A Pulsed drain current: 20A Power dissipation: 0.7W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 91mΩ Mounting: SMD Gate charge: 7.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
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DMN2065UW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.6A; Idm: 30A; 700mW; SOT323 Mounting: SMD Power dissipation: 0.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.4nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 30A Type of transistor: N-MOSFET Case: SOT323 On-state resistance: 0.14Ω Drain current: 2.6A Drain-source voltage: 20V Anzahl je Verpackung: 5 Stücke |
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DMN2065UWQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.6A; Idm: 30A; 700mW; SOT323 Application: automotive industry Mounting: SMD Power dissipation: 0.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.4nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 30A Type of transistor: N-MOSFET Case: SOT323 On-state resistance: 0.14Ω Drain current: 2.6A Drain-source voltage: 20V Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMN2075UDW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 20A; 580mW; SOT363 Pulsed drain current: 20A Power dissipation: 0.58W Gate charge: 7nC Polarisation: unipolar Drain current: 2.5A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: SOT363 On-state resistance: 0.1Ω Mounting: SMD Anzahl je Verpackung: 5 Stücke |
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| DMN2080UCB4-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 8A; 1.25W Mounting: SMD Case: X2-WLB0808-4 Kind of package: reel; tape Gate charge: 7.4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 8A Drain-source voltage: 20V Drain current: 3.2A On-state resistance: 0.115Ω Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
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DMN2100UDM-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.6W; SOT26 Polarisation: unipolar Drain-source voltage: 20V Kind of package: reel; tape Case: SOT26 Drain current: 2.5A Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD On-state resistance: 0.13Ω Type of transistor: N-MOSFET Power dissipation: 0.6W Anzahl je Verpackung: 1 Stücke |
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| DMN21D2UFB-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW Type of transistor: N-MOSFET Case: X1-DFN1006-3 Mounting: SMD Power dissipation: 570mW Kind of package: reel; tape Pulsed drain current: 1A On-state resistance: 3Ω Drain-source voltage: 20V Polarisation: unipolar Gate charge: 930pC Kind of channel: enhanced Gate-source voltage: ±12V Drain current: 0.7A Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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| DMN21D2UFB-7B | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW Type of transistor: N-MOSFET Case: X1-DFN1006-3 Mounting: SMD Power dissipation: 570mW Kind of package: reel; tape Pulsed drain current: 1A On-state resistance: 3Ω Drain-source voltage: 20V Polarisation: unipolar Gate charge: 930pC Kind of channel: enhanced Gate-source voltage: ±12V Drain current: 0.7A Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMN2230U-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23 Power dissipation: 0.6W Polarisation: unipolar Drain current: 2A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: SOT23 On-state resistance: 0.23Ω Mounting: SMD Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2549 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN2230UQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 7A; 600mW; SOT23 Pulsed drain current: 7A Power dissipation: 0.6W Gate charge: 2.3nC Polarisation: unipolar Drain current: 2A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: SOT23 On-state resistance: 0.23Ω Mounting: SMD Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMN2230UQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23 Power dissipation: 0.6W Polarisation: unipolar Drain current: 2A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: SOT23 On-state resistance: 0.11Ω Mounting: SMD Anzahl je Verpackung: 5 Stücke |
auf Bestellung 3355 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN2250UFB-7B | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.03A; Idm: 6A; 300mW Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 6A Case: X1-DFN1006-3 Drain-source voltage: 20V Drain current: 1.03A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 0.3W Polarisation: unipolar Gate charge: 3.1nC Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMN2300U-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.01A; Idm: 11A; 550mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.01A Pulsed drain current: 11A Power dissipation: 0.55W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 1.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMN2300UFB-7B | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 940mA; Idm: 8A; 1.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.94A Pulsed drain current: 8A Power dissipation: 1.2W Case: X1-DFN1006-3 Gate-source voltage: ±8V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 0.89nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMN2300UFB4-7B | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.96A; 0.5W; X1-DFN1006-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.96A Power dissipation: 0.5W Case: X1-DFN1006-3 Gate-source voltage: ±8V On-state resistance: 0.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMN2300UFD-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.34A; Idm: 6A; 470mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.34A Pulsed drain current: 6A Power dissipation: 0.47W Case: X1-DFN1212-3 Gate-source voltage: ±8V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| DMN2300UFL4-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.19A; Idm: 6A; 1.39W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.19A Pulsed drain current: 6A Power dissipation: 1.39W Case: X2-DFN1310-6 Gate-source voltage: ±8V On-state resistance: 0.52Ω Mounting: SMD Gate charge: 3.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMN2310U-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 680mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.2A Pulsed drain current: 4.8A Power dissipation: 0.68W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 20 Stücke |
Produkt ist nicht verfügbar |
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DMN2310UW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.1A Pulsed drain current: 4.4A Power dissipation: 0.55W Case: SOT323 Gate-source voltage: ±8V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 20 Stücke |
Produkt ist nicht verfügbar |
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DMN2310UWQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.1A Pulsed drain current: 4.4A Power dissipation: 0.55W Case: SOT323 Gate-source voltage: ±8V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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| DMN2320UFB4-7B | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 6A; 1.07W Type of transistor: N-MOSFET Case: X2-DFN1006-3 Mounting: SMD Power dissipation: 1.07W Kind of package: reel; tape Polarisation: unipolar Gate charge: 0.89nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 6A Drain-source voltage: 20V Drain current: 0.7A On-state resistance: 1Ω Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMN2400UFB-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 550mA; Idm: 3A; 470mW Polarisation: unipolar Power dissipation: 0.47W Gate charge: 0.5nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 3A Type of transistor: N-MOSFET On-state resistance: 0.9Ω Drain current: 0.55A Drain-source voltage: 20V Case: X1-DFN1006-3 Kind of package: reel; tape Mounting: SMD Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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| DMN2400UFDQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 3A; 850mW Polarisation: unipolar Power dissipation: 0.85W Gate charge: 0.5nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 3A Type of transistor: N-MOSFET On-state resistance: 1.6Ω Drain current: 0.7A Drain-source voltage: 20V Case: U-DFN1212-3 Kind of package: reel; tape Mounting: SMD Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| DMN2400UV-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 840mA; Idm: 3A; 530mW; SOT563 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.84A Pulsed drain current: 3A Power dissipation: 0.53W Case: SOT563 Gate-source voltage: ±12V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 0.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMN2400UV-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.84A; 0.53W; SOT563 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.84A Power dissipation: 0.53W Case: SOT563 Gate-source voltage: ±12V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2835 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMN2450UFB4-7B | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW Mounting: SMD Case: X2-DFN1006-3 Kind of package: reel; tape Power dissipation: 0.9W Drain-source voltage: 20V Drain current: 0.8A On-state resistance: 0.7Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 1.3nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 3A Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMN2450UFB4-7R | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW Mounting: SMD Case: X2-DFN1006-3 Kind of package: reel; tape Power dissipation: 0.9W Drain-source voltage: 20V Drain current: 0.8A On-state resistance: 0.7Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 1.3nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 3A Anzahl je Verpackung: 20 Stücke |
Produkt ist nicht verfügbar |
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| DMN2450UFD-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 3A; 890mW Mounting: SMD Case: X1-DFN1212-3 Kind of package: reel; tape Power dissipation: 0.89W Drain-source voltage: 20V Drain current: 0.7A On-state resistance: 1.6Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 0.7nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 3A Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
| DMN2027USS-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10.7A; Idm: 45A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10.7A
Pulsed drain current: 45A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10.7A; Idm: 45A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10.7A
Pulsed drain current: 45A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMN2028UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Type of transistor: N-MOSFET
Case: U-DFN2020-6
Mounting: SMD
Power dissipation: 1.31W
Kind of package: reel; tape
Pulsed drain current: 40A
On-state resistance: 95mΩ
Drain-source voltage: 20V
Polarisation: unipolar
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain current: 7.5A
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Type of transistor: N-MOSFET
Case: U-DFN2020-6
Mounting: SMD
Power dissipation: 1.31W
Kind of package: reel; tape
Pulsed drain current: 40A
On-state resistance: 95mΩ
Drain-source voltage: 20V
Polarisation: unipolar
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain current: 7.5A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMN2028UFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMN2028UFDH-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7A; Idm: 40A; 1.5W; V-DFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7A
Pulsed drain current: 40A
Power dissipation: 1.5W
Case: V-DFN3030-8
Gate-source voltage: ±12V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7A; Idm: 40A; 1.5W; V-DFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7A
Pulsed drain current: 40A
Power dissipation: 1.5W
Case: V-DFN3030-8
Gate-source voltage: ±12V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMN2028UFU-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.9A; Idm: 40A; 1.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.9A
Pulsed drain current: 40A
Power dissipation: 1.8W
Case: U-DFN2030-6
Gate-source voltage: ±10V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 18.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.9A; Idm: 40A; 1.8W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.9A
Pulsed drain current: 40A
Power dissipation: 1.8W
Case: U-DFN2030-6
Gate-source voltage: ±10V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 18.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMN2028USS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.3A; 12.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.3A
Power dissipation: 12.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 28mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.3A; 12.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.3A
Power dissipation: 12.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 28mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMN2028UVT-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; Idm: 40A; 1.6W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Pulsed drain current: 40A
Power dissipation: 1.6W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; Idm: 40A; 1.6W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Pulsed drain current: 40A
Power dissipation: 1.6W
Case: TSOT26
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| DMN2029USD-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; 0.7W; SO8
Polarisation: unipolar
On-state resistance: 35mΩ
Kind of package: reel; tape
Drain current: 4.8A
Drain-source voltage: 20V
Case: SO8
Kind of channel: enhanced
Gate-source voltage: ±8V
Type of transistor: N-MOSFET x2
Mounting: SMD
Power dissipation: 0.7W
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; 0.7W; SO8
Polarisation: unipolar
On-state resistance: 35mΩ
Kind of package: reel; tape
Drain current: 4.8A
Drain-source voltage: 20V
Case: SO8
Kind of channel: enhanced
Gate-source voltage: ±8V
Type of transistor: N-MOSFET x2
Mounting: SMD
Power dissipation: 0.7W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMN2036UCB4-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 4A; Idm: 30A; 1.45W
Mounting: SMD
Case: X2-WLB1616-4
Kind of package: reel; tape
Gate charge: 12.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Drain-source voltage: 24V
Drain current: 4A
On-state resistance: 52mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.45W
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 4A; Idm: 30A; 1.45W
Mounting: SMD
Case: X2-WLB1616-4
Kind of package: reel; tape
Gate charge: 12.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Drain-source voltage: 24V
Drain current: 4A
On-state resistance: 52mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.45W
Polarisation: unipolar
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMN2040LTS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 30A; 890mW; TSSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Pulsed drain current: 30A
Power dissipation: 0.89W
Case: TSSOP8
Gate-source voltage: ±12V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 30A; 890mW; TSSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Pulsed drain current: 30A
Power dissipation: 0.89W
Case: TSSOP8
Gate-source voltage: ±12V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2245 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 210+ | 0.34 EUR |
| 254+ | 0.28 EUR |
| 288+ | 0.25 EUR |
| 327+ | 0.22 EUR |
| 346+ | 0.21 EUR |
| DMN2040U-13 |
|
Hersteller: DIODES INCORPORATED
DMN2040U-13 SMD N channel transistors
DMN2040U-13 SMD N channel transistors
Produkt ist nicht verfügbar
| DMN2040U-7 |
|
Hersteller: DIODES INCORPORATED
DMN2040U-7 SMD N channel transistors
DMN2040U-7 SMD N channel transistors
Produkt ist nicht verfügbar
| DMN2041L-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.5A; Idm: 30A; 780mW; SOT23
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
Drain current: 4.5A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.78W
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.5A; Idm: 30A; 780mW; SOT23
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
Drain current: 4.5A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.78W
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| DMN2041LSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.92A; Idm: 30A; 1.16W; SO8
Polarisation: unipolar
On-state resistance: 41mΩ
Kind of package: reel; tape
Drain current: 4.92A
Drain-source voltage: 20V
Case: SO8
Gate charge: 15.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 1.16W
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.92A; Idm: 30A; 1.16W; SO8
Polarisation: unipolar
On-state resistance: 41mΩ
Kind of package: reel; tape
Drain current: 4.92A
Drain-source voltage: 20V
Case: SO8
Gate charge: 15.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 1.16W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMN2041UFDB-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 20A; 2.2W
Mounting: SMD
Case: U-DFN2020-6
Pulsed drain current: 20A
Drain-source voltage: 20V
Drain current: 4.9A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; Idm: 20A; 2.2W
Mounting: SMD
Case: U-DFN2020-6
Pulsed drain current: 20A
Drain-source voltage: 20V
Drain current: 4.9A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMN2044UCB4-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 16A; 1.18W
Mounting: SMD
Case: U-WLB1010-4
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 16A
Drain-source voltage: 20V
Drain current: 3.6A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.18W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 16A; 1.18W
Mounting: SMD
Case: U-WLB1010-4
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 16A
Drain-source voltage: 20V
Drain current: 3.6A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.18W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMN2046U-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; Idm: 18A; 1.26W; SOT23
Kind of package: reel; tape
Pulsed drain current: 18A
Power dissipation: 1.26W
Gate charge: 3.8nC
Polarisation: unipolar
Drain current: 2.7A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Case: SOT23
On-state resistance: 0.11Ω
Gate-source voltage: ±12V
Mounting: SMD
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; Idm: 18A; 1.26W; SOT23
Kind of package: reel; tape
Pulsed drain current: 18A
Power dissipation: 1.26W
Gate charge: 3.8nC
Polarisation: unipolar
Drain current: 2.7A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Case: SOT23
On-state resistance: 0.11Ω
Gate-source voltage: ±12V
Mounting: SMD
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMN2046U-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; 0.76W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.7A
Power dissipation: 0.76W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.7A; 0.76W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.7A
Power dissipation: 0.76W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1655 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 310+ | 0.23 EUR |
| 785+ | 0.091 EUR |
| 890+ | 0.081 EUR |
| 1050+ | 0.068 EUR |
| 1110+ | 0.065 EUR |
| DMN2050L-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.9A; 1.4W; SOT23
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±12V
Case: SOT23
On-state resistance: 0.1Ω
Power dissipation: 1.4W
Polarisation: unipolar
Drain current: 5.9A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.9A; 1.4W; SOT23
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±12V
Case: SOT23
On-state resistance: 0.1Ω
Power dissipation: 1.4W
Polarisation: unipolar
Drain current: 5.9A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMN2050LFDB-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 25A; 900mW
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 25A
Mounting: SMD
Case: U-DFN2020-6
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 25A; 900mW
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 25A
Mounting: SMD
Case: U-DFN2020-6
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMN2050LFDB-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.1A; 0.73W; U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±12V
Case: U-DFN2020-6
On-state resistance: 55mΩ
Power dissipation: 0.73W
Polarisation: unipolar
Drain current: 4.1A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.1A; 0.73W; U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±12V
Case: U-DFN2020-6
On-state resistance: 55mΩ
Power dissipation: 0.73W
Polarisation: unipolar
Drain current: 4.1A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMN2053U-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 0.8W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.4A
Pulsed drain current: 22A
Power dissipation: 0.8W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 0.8W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.4A
Pulsed drain current: 22A
Power dissipation: 0.8W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| DMN2053U-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 1.3W; SOT23
Power dissipation: 1.3W
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Drain-source voltage: 20V
Drain current: 5.4A
On-state resistance: 91mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 4.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 22A
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 1.3W; SOT23
Power dissipation: 1.3W
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Drain-source voltage: 20V
Drain current: 5.4A
On-state resistance: 91mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 4.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 22A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| DMN2053UVT-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; Idm: 22A; 1.1W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Pulsed drain current: 22A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; Idm: 22A; 1.1W; TSOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Pulsed drain current: 22A
Power dissipation: 1.1W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| DMN2053UW-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 1.3W; SOT23
Power dissipation: 1.3W
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Drain-source voltage: 20V
Drain current: 5.4A
On-state resistance: 91mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 4.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 22A
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.4A; Idm: 22A; 1.3W; SOT23
Power dissipation: 1.3W
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Drain-source voltage: 20V
Drain current: 5.4A
On-state resistance: 91mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 4.6nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 22A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| DMN2053UWQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; Idm: 20A; 0.47W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Pulsed drain current: 20A
Power dissipation: 0.47W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; Idm: 20A; 0.47W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Pulsed drain current: 20A
Power dissipation: 0.47W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| DMN2055U-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMN2055U-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| DMN2056U-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 22A; 940mW; SOT23
Polarisation: unipolar
Power dissipation: 0.94W
Kind of package: reel; tape
Gate charge: 4.3nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 22A
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
Drain current: 3.2A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 22A; 940mW; SOT23
Polarisation: unipolar
Power dissipation: 0.94W
Kind of package: reel; tape
Gate charge: 4.3nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 22A
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
Drain current: 3.2A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMN2056U-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23
Polarisation: unipolar
Power dissipation: 0.94W
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
Drain current: 3.7A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23
Polarisation: unipolar
Power dissipation: 0.94W
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
Drain current: 3.7A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3025 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 157+ | 0.46 EUR |
| 204+ | 0.35 EUR |
| 240+ | 0.3 EUR |
| 358+ | 0.2 EUR |
| 421+ | 0.17 EUR |
| 605+ | 0.12 EUR |
| 639+ | 0.11 EUR |
| DMN2058U-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; Idm: 24A; 1.13W; SOT23
Case: SOT23
Drain-source voltage: 20V
Drain current: 3.7A
On-state resistance: 91mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.13W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 24A
Mounting: SMD
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; Idm: 24A; 1.13W; SOT23
Case: SOT23
Drain-source voltage: 20V
Drain current: 3.7A
On-state resistance: 91mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.13W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 24A
Mounting: SMD
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMN2058U-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.3A; 0.74W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.3A
Power dissipation: 0.74W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.3A; 0.74W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.3A
Power dissipation: 0.74W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 340+ | 0.21 EUR |
| 500+ | 0.14 EUR |
| 565+ | 0.13 EUR |
| 690+ | 0.1 EUR |
| 730+ | 0.098 EUR |
| DMN2058UW-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3A; Idm: 20A; 700mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3A
Pulsed drain current: 20A
Power dissipation: 0.7W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3A; Idm: 20A; 700mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3A
Pulsed drain current: 20A
Power dissipation: 0.7W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 91mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMN2065UW-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.6A; Idm: 30A; 700mW; SOT323
Mounting: SMD
Power dissipation: 0.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Type of transistor: N-MOSFET
Case: SOT323
On-state resistance: 0.14Ω
Drain current: 2.6A
Drain-source voltage: 20V
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.6A; Idm: 30A; 700mW; SOT323
Mounting: SMD
Power dissipation: 0.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Type of transistor: N-MOSFET
Case: SOT323
On-state resistance: 0.14Ω
Drain current: 2.6A
Drain-source voltage: 20V
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| DMN2065UWQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.6A; Idm: 30A; 700mW; SOT323
Application: automotive industry
Mounting: SMD
Power dissipation: 0.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Type of transistor: N-MOSFET
Case: SOT323
On-state resistance: 0.14Ω
Drain current: 2.6A
Drain-source voltage: 20V
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.6A; Idm: 30A; 700mW; SOT323
Application: automotive industry
Mounting: SMD
Power dissipation: 0.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Type of transistor: N-MOSFET
Case: SOT323
On-state resistance: 0.14Ω
Drain current: 2.6A
Drain-source voltage: 20V
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| DMN2075UDW-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 20A; 580mW; SOT363
Pulsed drain current: 20A
Power dissipation: 0.58W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 2.5A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SOT363
On-state resistance: 0.1Ω
Mounting: SMD
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 20A; 580mW; SOT363
Pulsed drain current: 20A
Power dissipation: 0.58W
Gate charge: 7nC
Polarisation: unipolar
Drain current: 2.5A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SOT363
On-state resistance: 0.1Ω
Mounting: SMD
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| DMN2080UCB4-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 8A; 1.25W
Mounting: SMD
Case: X2-WLB0808-4
Kind of package: reel; tape
Gate charge: 7.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
Drain-source voltage: 20V
Drain current: 3.2A
On-state resistance: 0.115Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 8A; 1.25W
Mounting: SMD
Case: X2-WLB0808-4
Kind of package: reel; tape
Gate charge: 7.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
Drain-source voltage: 20V
Drain current: 3.2A
On-state resistance: 0.115Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMN2100UDM-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.6W; SOT26
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT26
Drain current: 2.5A
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
On-state resistance: 0.13Ω
Type of transistor: N-MOSFET
Power dissipation: 0.6W
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; 0.6W; SOT26
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT26
Drain current: 2.5A
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
On-state resistance: 0.13Ω
Type of transistor: N-MOSFET
Power dissipation: 0.6W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMN21D2UFB-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Type of transistor: N-MOSFET
Case: X1-DFN1006-3
Mounting: SMD
Power dissipation: 570mW
Kind of package: reel; tape
Pulsed drain current: 1A
On-state resistance: 3Ω
Drain-source voltage: 20V
Polarisation: unipolar
Gate charge: 930pC
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain current: 0.7A
Anzahl je Verpackung: 10 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Type of transistor: N-MOSFET
Case: X1-DFN1006-3
Mounting: SMD
Power dissipation: 570mW
Kind of package: reel; tape
Pulsed drain current: 1A
On-state resistance: 3Ω
Drain-source voltage: 20V
Polarisation: unipolar
Gate charge: 930pC
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain current: 0.7A
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
| DMN21D2UFB-7B |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Type of transistor: N-MOSFET
Case: X1-DFN1006-3
Mounting: SMD
Power dissipation: 570mW
Kind of package: reel; tape
Pulsed drain current: 1A
On-state resistance: 3Ω
Drain-source voltage: 20V
Polarisation: unipolar
Gate charge: 930pC
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain current: 0.7A
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 1A; 570mW
Type of transistor: N-MOSFET
Case: X1-DFN1006-3
Mounting: SMD
Power dissipation: 570mW
Kind of package: reel; tape
Pulsed drain current: 1A
On-state resistance: 3Ω
Drain-source voltage: 20V
Polarisation: unipolar
Gate charge: 930pC
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain current: 0.7A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMN2230U-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Power dissipation: 0.6W
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.23Ω
Mounting: SMD
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Power dissipation: 0.6W
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.23Ω
Mounting: SMD
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2549 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 310+ | 0.23 EUR |
| 380+ | 0.19 EUR |
| 430+ | 0.17 EUR |
| 485+ | 0.15 EUR |
| 510+ | 0.14 EUR |
| DMN2230UQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 7A; 600mW; SOT23
Pulsed drain current: 7A
Power dissipation: 0.6W
Gate charge: 2.3nC
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.23Ω
Mounting: SMD
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 7A; 600mW; SOT23
Pulsed drain current: 7A
Power dissipation: 0.6W
Gate charge: 2.3nC
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.23Ω
Mounting: SMD
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMN2230UQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Power dissipation: 0.6W
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.11Ω
Mounting: SMD
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Power dissipation: 0.6W
Polarisation: unipolar
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.11Ω
Mounting: SMD
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3355 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 295+ | 0.24 EUR |
| 355+ | 0.2 EUR |
| 400+ | 0.18 EUR |
| 485+ | 0.15 EUR |
| 515+ | 0.14 EUR |
| DMN2250UFB-7B |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.03A; Idm: 6A; 300mW
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6A
Case: X1-DFN1006-3
Drain-source voltage: 20V
Drain current: 1.03A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Gate charge: 3.1nC
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.03A; Idm: 6A; 300mW
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6A
Case: X1-DFN1006-3
Drain-source voltage: 20V
Drain current: 1.03A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Gate charge: 3.1nC
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMN2300U-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.01A; Idm: 11A; 550mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.01A
Pulsed drain current: 11A
Power dissipation: 0.55W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.01A; Idm: 11A; 550mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.01A
Pulsed drain current: 11A
Power dissipation: 0.55W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMN2300UFB-7B |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 940mA; Idm: 8A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.94A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 0.89nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 940mA; Idm: 8A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.94A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 0.89nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMN2300UFB4-7B |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.96A; 0.5W; X1-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.96A
Power dissipation: 0.5W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.96A; 0.5W; X1-DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.96A
Power dissipation: 0.5W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMN2300UFD-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.34A; Idm: 6A; 470mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.34A
Pulsed drain current: 6A
Power dissipation: 0.47W
Case: X1-DFN1212-3
Gate-source voltage: ±8V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.34A; Idm: 6A; 470mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.34A
Pulsed drain current: 6A
Power dissipation: 0.47W
Case: X1-DFN1212-3
Gate-source voltage: ±8V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| DMN2300UFL4-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.19A; Idm: 6A; 1.39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.19A
Pulsed drain current: 6A
Power dissipation: 1.39W
Case: X2-DFN1310-6
Gate-source voltage: ±8V
On-state resistance: 0.52Ω
Mounting: SMD
Gate charge: 3.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.19A; Idm: 6A; 1.39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.19A
Pulsed drain current: 6A
Power dissipation: 1.39W
Case: X2-DFN1310-6
Gate-source voltage: ±8V
On-state resistance: 0.52Ω
Mounting: SMD
Gate charge: 3.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMN2310U-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 680mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Pulsed drain current: 4.8A
Power dissipation: 0.68W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 20 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 680mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Pulsed drain current: 4.8A
Power dissipation: 0.68W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 20 Stücke
Produkt ist nicht verfügbar
| DMN2310UW-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Pulsed drain current: 4.4A
Power dissipation: 0.55W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 20 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Pulsed drain current: 4.4A
Power dissipation: 0.55W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 20 Stücke
Produkt ist nicht verfügbar
| DMN2310UWQ-7 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Pulsed drain current: 4.4A
Power dissipation: 0.55W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 10 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; Idm: 4.4A; 550mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Pulsed drain current: 4.4A
Power dissipation: 0.55W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
| DMN2320UFB4-7B |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 6A; 1.07W
Type of transistor: N-MOSFET
Case: X2-DFN1006-3
Mounting: SMD
Power dissipation: 1.07W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 0.89nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6A
Drain-source voltage: 20V
Drain current: 0.7A
On-state resistance: 1Ω
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 6A; 1.07W
Type of transistor: N-MOSFET
Case: X2-DFN1006-3
Mounting: SMD
Power dissipation: 1.07W
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 0.89nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6A
Drain-source voltage: 20V
Drain current: 0.7A
On-state resistance: 1Ω
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMN2400UFB-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 550mA; Idm: 3A; 470mW
Polarisation: unipolar
Power dissipation: 0.47W
Gate charge: 0.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 3A
Type of transistor: N-MOSFET
On-state resistance: 0.9Ω
Drain current: 0.55A
Drain-source voltage: 20V
Case: X1-DFN1006-3
Kind of package: reel; tape
Mounting: SMD
Anzahl je Verpackung: 10 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 550mA; Idm: 3A; 470mW
Polarisation: unipolar
Power dissipation: 0.47W
Gate charge: 0.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 3A
Type of transistor: N-MOSFET
On-state resistance: 0.9Ω
Drain current: 0.55A
Drain-source voltage: 20V
Case: X1-DFN1006-3
Kind of package: reel; tape
Mounting: SMD
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
| DMN2400UFDQ-7 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 3A; 850mW
Polarisation: unipolar
Power dissipation: 0.85W
Gate charge: 0.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 3A
Type of transistor: N-MOSFET
On-state resistance: 1.6Ω
Drain current: 0.7A
Drain-source voltage: 20V
Case: U-DFN1212-3
Kind of package: reel; tape
Mounting: SMD
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 3A; 850mW
Polarisation: unipolar
Power dissipation: 0.85W
Gate charge: 0.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 3A
Type of transistor: N-MOSFET
On-state resistance: 1.6Ω
Drain current: 0.7A
Drain-source voltage: 20V
Case: U-DFN1212-3
Kind of package: reel; tape
Mounting: SMD
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| DMN2400UV-13 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 840mA; Idm: 3A; 530mW; SOT563
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.84A
Pulsed drain current: 3A
Power dissipation: 0.53W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 840mA; Idm: 3A; 530mW; SOT563
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.84A
Pulsed drain current: 3A
Power dissipation: 0.53W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMN2400UV-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.84A; 0.53W; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.84A
Power dissipation: 0.53W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.84A; 0.53W; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.84A
Power dissipation: 0.53W
Case: SOT563
Gate-source voltage: ±12V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2835 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 295+ | 0.25 EUR |
| 530+ | 0.14 EUR |
| 590+ | 0.12 EUR |
| 655+ | 0.11 EUR |
| 695+ | 0.1 EUR |
| DMN2450UFB4-7B |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW
Mounting: SMD
Case: X2-DFN1006-3
Kind of package: reel; tape
Power dissipation: 0.9W
Drain-source voltage: 20V
Drain current: 0.8A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 3A
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW
Mounting: SMD
Case: X2-DFN1006-3
Kind of package: reel; tape
Power dissipation: 0.9W
Drain-source voltage: 20V
Drain current: 0.8A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 3A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMN2450UFB4-7R |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW
Mounting: SMD
Case: X2-DFN1006-3
Kind of package: reel; tape
Power dissipation: 0.9W
Drain-source voltage: 20V
Drain current: 0.8A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 3A
Anzahl je Verpackung: 20 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW
Mounting: SMD
Case: X2-DFN1006-3
Kind of package: reel; tape
Power dissipation: 0.9W
Drain-source voltage: 20V
Drain current: 0.8A
On-state resistance: 0.7Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 1.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 3A
Anzahl je Verpackung: 20 Stücke
Produkt ist nicht verfügbar
| DMN2450UFD-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 3A; 890mW
Mounting: SMD
Case: X1-DFN1212-3
Kind of package: reel; tape
Power dissipation: 0.89W
Drain-source voltage: 20V
Drain current: 0.7A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 3A
Anzahl je Verpackung: 10 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 3A; 890mW
Mounting: SMD
Case: X1-DFN1212-3
Kind of package: reel; tape
Power dissipation: 0.89W
Drain-source voltage: 20V
Drain current: 0.7A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.7nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 3A
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar