auf Bestellung 309000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.09 EUR |
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Technische Details DMN2065UW-7 Diodes Zetex
Description: MOSFET N CH 20V 2.8A SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V, Power Dissipation (Max): 430mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-323, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V.
Weitere Produktangebote DMN2065UW-7 nach Preis ab 0.094 EUR bis 0.62 EUR
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DMN2065UW-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET N CH 20V 2.8A SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V Power Dissipation (Max): 430mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V |
auf Bestellung 312000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2065UW-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N CH 20V 2.8A SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V Power Dissipation (Max): 430mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V |
auf Bestellung 319754 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2065UW-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V 8V-24V SOT323 T&R 3K |
auf Bestellung 16043 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2065UW-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-323 T/R |
Produkt ist nicht verfügbar |
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DMN2065UW-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.6A; Idm: 30A; 700mW; SOT323 Mounting: SMD Power dissipation: 0.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.4nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 30A Type of transistor: N-MOSFET Case: SOT323 On-state resistance: 0.14Ω Drain current: 2.6A Drain-source voltage: 20V Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMN2065UW-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.6A; Idm: 30A; 700mW; SOT323 Mounting: SMD Power dissipation: 0.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.4nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 30A Type of transistor: N-MOSFET Case: SOT323 On-state resistance: 0.14Ω Drain current: 2.6A Drain-source voltage: 20V |
Produkt ist nicht verfügbar |