DMN2080UCB4-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 20V 3A X2-WLB0606-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 4.5V
Power Dissipation (Max): 710mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-WLB0606-4
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
auf Bestellung 849000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.21 EUR |
| 6000+ | 0.2 EUR |
| 9000+ | 0.18 EUR |
| 75000+ | 0.17 EUR |
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Technische Details DMN2080UCB4-7 Diodes Incorporated
Description: MOSFET N-CH 20V 3A X2-WLB0606-4, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, WLBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 4.5V, Power Dissipation (Max): 710mW, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-WLB0606-4, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V.
Weitere Produktangebote DMN2080UCB4-7 nach Preis ab 0.17 EUR bis 0.77 EUR
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DMN2080UCB4-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 3A X2-WLB0606-4 Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 4.5V Power Dissipation (Max): 710mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-WLB0606-4 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V |
auf Bestellung 849000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2080UCB4-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V |
auf Bestellung 2999 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2080UCB4-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 20V 4A 4-Pin X2-WLP T/R |
Produkt ist nicht verfügbar |
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| DMN2080UCB4-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 8A; 1.25W Mounting: SMD Case: X2-WLB0808-4 Kind of package: reel; tape Gate charge: 7.4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 8A Drain-source voltage: 20V Drain current: 3.2A On-state resistance: 0.115Ω Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMN2080UCB4-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 8A; 1.25W Mounting: SMD Case: X2-WLB0808-4 Kind of package: reel; tape Gate charge: 7.4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 8A Drain-source voltage: 20V Drain current: 3.2A On-state resistance: 0.115Ω Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar |
Produkt ist nicht verfügbar |