DMN2028UFU-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 20V 7.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 10V
Rds On (Max) @ Id, Vgs: 20.2mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.25 EUR |
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Technische Details DMN2028UFU-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 7.5A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 7.5A, Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 10V, Rds On (Max) @ Id, Vgs: 20.2mOhm @ 4.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2030-6 (Type B), Part Status: Active.
Weitere Produktangebote DMN2028UFU-7 nach Preis ab 0.19 EUR bis 0.72 EUR
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DMN2028UFU-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 7.5A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 10V Rds On (Max) @ Id, Vgs: 20.2mOhm @ 4.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) Part Status: Active |
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Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.9A; Idm: 40A; 1.8W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.9A Pulsed drain current: 40A Power dissipation: 1.8W Case: U-DFN2030-6 Gate-source voltage: ±10V On-state resistance: 30mΩ Mounting: SMD Gate charge: 18.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.9A; Idm: 40A; 1.8W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.9A Pulsed drain current: 40A Power dissipation: 1.8W Case: U-DFN2030-6 Gate-source voltage: ±10V On-state resistance: 30mΩ Mounting: SMD Gate charge: 18.4nC Kind of package: reel; tape Kind of channel: enhanced |
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