auf Bestellung 70000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.18 EUR |
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Technische Details DMN2029USD-13 Diodes Zetex
Description: MOSFET 2N-CH 20V 5.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5.8A, Input Capacitance (Ciss) (Max) @ Vds: 1171pF @ 10V, Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 8V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SO.
Weitere Produktangebote DMN2029USD-13 nach Preis ab 0.19 EUR bis 1.38 EUR
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DMN2029USD-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 20V 5.8A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.8A Input Capacitance (Ciss) (Max) @ Vds: 1171pF @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 8V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 165000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2029USD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 5.8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.8A Input Capacitance (Ciss) (Max) @ Vds: 1171pF @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 8V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 168175 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2029USD-13 | Hersteller : Diodes Incorporated |
MOSFET 20V Dual N-Ch ENH 20V 25mOhm 4.5V 5.8A |
auf Bestellung 3535 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2029USD-13 | Hersteller : Diodes INC. |
N-канальний ПТ; Udss, В = 20; Id = 5,8 А; Ciss, пФ @ Uds, В = 1171 @ 10; Qg, нКл = 18,6 @ 8 В; Rds = 25 мОм @ 6,5 A, 4,5 В; Ugs(th) = 1,5 В @ 250 мкА; Р, Вт = 1,2; Тексп, °C = -55...+150; Тип монт. = smd; SOICN-8 |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2029USD-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 20V 5.8A 8-Pin SO T/R |
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DMN2029USD-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 20V 5.8A 8-Pin SO T/R |
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DMN2029USD-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 20V 5.8A 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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DMN2029USD-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; 0.7W; SO8 Polarisation: unipolar On-state resistance: 35mΩ Kind of package: reel; tape Drain current: 4.8A Drain-source voltage: 20V Case: SO8 Kind of channel: enhanced Gate-source voltage: ±8V Type of transistor: N-MOSFET x2 Mounting: SMD Power dissipation: 0.7W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMN2029USD-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; 0.7W; SO8 Polarisation: unipolar On-state resistance: 35mΩ Kind of package: reel; tape Drain current: 4.8A Drain-source voltage: 20V Case: SO8 Kind of channel: enhanced Gate-source voltage: ±8V Type of transistor: N-MOSFET x2 Mounting: SMD Power dissipation: 0.7W |
Produkt ist nicht verfügbar |