DMN3150L-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 28V 3.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 28 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 5 V
auf Bestellung 897000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.15 EUR |
| 9000+ | 0.13 EUR |
| 75000+ | 0.11 EUR |
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Technische Details DMN3150L-7 Diodes Incorporated
Description: MOSFET N-CH 28V 3.8A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 28 V, Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 5 V.
Weitere Produktangebote DMN3150L-7 nach Preis ab 0.099 EUR bis 0.7 EUR
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DMN3150L-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 1.4W; SOT23 Mounting: SMD Kind of package: reel; tape On-state resistance: 54mΩ Type of transistor: N-MOSFET Power dissipation: 1.4W Polarisation: unipolar Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 15A Drain-source voltage: 30V Drain current: 3.1A Anzahl je Verpackung: 5 Stücke |
auf Bestellung 1815 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN3150L-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 15A; 1.4W; SOT23 Mounting: SMD Kind of package: reel; tape On-state resistance: 54mΩ Type of transistor: N-MOSFET Power dissipation: 1.4W Polarisation: unipolar Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 15A Drain-source voltage: 30V Drain current: 3.1A |
auf Bestellung 1815 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3150L-7 | Hersteller : Diodes Incorporated |
MOSFET N-Channel |
auf Bestellung 43379 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3150L-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 28V 3.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 28 V Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 5 V |
auf Bestellung 901549 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3150L-7 | Hersteller : DIODES/ZETEX |
N-MOSFET 30V 3.8A 85mΩ 1.4W DMN3150L-7 Diodes TDMN3150l Anzahl je Verpackung: 100 Stücke |
auf Bestellung 390 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN3150L-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 28V 3.8A 3-Pin SOT-23 T/R |
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