DMN31D6UT-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 30V 350MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V
auf Bestellung 960000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.087 EUR |
| 6000+ | 0.081 EUR |
| 9000+ | 0.067 EUR |
| 30000+ | 0.066 EUR |
| 75000+ | 0.059 EUR |
| 150000+ | 0.051 EUR |
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Technische Details DMN31D6UT-7 Diodes Incorporated
Description: MOSFET N-CH 30V 350MA SOT523, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, Power Dissipation (Max): 320mW, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: SOT-523, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V.
Weitere Produktangebote DMN31D6UT-7 nach Preis ab 0.062 EUR bis 0.52 EUR
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DMN31D6UT-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 350MA SOT523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Power Dissipation (Max): 320mW Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13.6 pF @ 15 V |
auf Bestellung 962995 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN31D6UT-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFETBVDSS: 25V-30V |
auf Bestellung 2670 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN31D6UT-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 0.35A 3-Pin SOT-523 T/R |
Produkt ist nicht verfügbar |
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DMN31D6UT-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 350mA; Idm: 0.8A; 320mW; SOT523 Mounting: SMD Kind of package: reel; tape On-state resistance: 2Ω Type of transistor: N-MOSFET Power dissipation: 0.32W Polarisation: unipolar Gate charge: 0.35nC Case: SOT523 Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 0.8A Drain-source voltage: 30V Drain current: 0.35A Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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DMN31D6UT-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 350mA; Idm: 0.8A; 320mW; SOT523 Mounting: SMD Kind of package: reel; tape On-state resistance: 2Ω Type of transistor: N-MOSFET Power dissipation: 0.32W Polarisation: unipolar Gate charge: 0.35nC Case: SOT523 Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 0.8A Drain-source voltage: 30V Drain current: 0.35A |
Produkt ist nicht verfügbar |