DMN31D5L-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 30V 500MA SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V
auf Bestellung 5316000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.1 EUR |
| 6000+ | 0.095 EUR |
| 9000+ | 0.079 EUR |
| 30000+ | 0.078 EUR |
| 75000+ | 0.07 EUR |
| 150000+ | 0.06 EUR |
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Technische Details DMN31D5L-7 Diodes Incorporated
Description: MOSFET N-CH 30V 500MA SOT23 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V.
Weitere Produktangebote DMN31D5L-7 nach Preis ab 0.065 EUR bis 0.62 EUR
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DMN31D5L-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V |
auf Bestellung 4763 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN31D5L-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 500MA SOT23 T&R Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 15 V |
auf Bestellung 5320042 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN31D5L-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 0.5A T/R |
Produkt ist nicht verfügbar |
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DMN31D5L-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 400mA; Idm: 5A; 520mW; SOT23 Mounting: SMD Kind of package: reel; tape On-state resistance: 2Ω Type of transistor: N-MOSFET Power dissipation: 0.52W Polarisation: unipolar Gate charge: 1.2nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 5A Drain-source voltage: 30V Drain current: 0.4A Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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DMN31D5L-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 400mA; Idm: 5A; 520mW; SOT23 Mounting: SMD Kind of package: reel; tape On-state resistance: 2Ω Type of transistor: N-MOSFET Power dissipation: 0.52W Polarisation: unipolar Gate charge: 1.2nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 5A Drain-source voltage: 30V Drain current: 0.4A |
Produkt ist nicht verfügbar |