DMN4026SSD-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 40V 7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 105000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.5 EUR |
| 5000+ | 0.47 EUR |
| 12500+ | 0.45 EUR |
| 25000+ | 0.43 EUR |
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Technische Details DMN4026SSD-13 Diodes Incorporated
Description: MOSFET 2N-CH 40V 7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 7A, Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V, Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote DMN4026SSD-13 nach Preis ab 0.49 EUR bis 1.3 EUR
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DMN4026SSD-13 | Hersteller : Diodes Incorporated |
MOSFET N-Ch Enh Mode FET 40Vdss 20Vgss |
auf Bestellung 58246 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN4026SSD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 40V 7A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 106644 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN4026SSD-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 40V 7A 8-Pin SO T/R |
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DMN4026SSD-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 40V 7A 8-Pin SO T/R |
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DMN4026SSD-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 40V 7A 8-Pin SO T/R |
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DMN4026SSD-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 7.2A; Idm: 70A; 1.1W; SO8 Polarisation: unipolar On-state resistance: 32mΩ Kind of package: reel; tape Drain current: 7.2A Drain-source voltage: 40V Case: SO8 Gate charge: 43nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 1.1W Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMN4026SSD-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 7.2A; Idm: 70A; 1.1W; SO8 Polarisation: unipolar On-state resistance: 32mΩ Kind of package: reel; tape Drain current: 7.2A Drain-source voltage: 40V Case: SO8 Gate charge: 43nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 1.1W |
Produkt ist nicht verfügbar |