Produkte > DIODES INCORPORATED > DMN33D8LDW-7
DMN33D8LDW-7

DMN33D8LDW-7 Diodes Incorporated

DMN33D8LDW.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.25A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 933000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.11 EUR
6000+ 0.1 EUR
9000+ 0.09 EUR
30000+ 0.089 EUR
75000+ 0.073 EUR
150000+ 0.072 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details DMN33D8LDW-7 Diodes Incorporated

Description: MOSFET 2N-CH 30V 0.25A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 350mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 250mA, Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V, Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: SOT-363, Part Status: Active.

Weitere Produktangebote DMN33D8LDW-7 nach Preis ab 0.13 EUR bis 0.62 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMN33D8LDW-7 DMN33D8LDW-7 Hersteller : Diodes Incorporated DMN33D8LDW.pdf Description: MOSFET 2N-CH 30V 0.25A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 937950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
29+0.62 EUR
42+ 0.43 EUR
100+ 0.21 EUR
500+ 0.17 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 29
DMN33D8LDW-7 DMN33D8LDW-7 Hersteller : Diodes Incorporated DMN33D8LDW-536580.pdf MOSFET 33V Dual N-Ch Enh 30Vgss 250mA 0.35W
auf Bestellung 15191 Stücke:
Lieferzeit 10-14 Tag (e)
DMN33D8LDW-7 DMN33D8LDW-7 Hersteller : Diodes Inc 849dmn33d8ldw.pdf Trans MOSFET N-CH 30V 0.25A 6-Pin SOT-363 T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
DMN33D8LDW-7 Hersteller : DIODES INCORPORATED DMN33D8LDW.pdf DMN33D8LDW-7 Multi channel transistors
Produkt ist nicht verfügbar