Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75529) > Seite 1133 nach 1259
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DMP4047LFDEQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W Kind of package: reel; tape Drain-source voltage: -40V Drain current: -5.2A On-state resistance: 50mΩ Type of transistor: P-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 24.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -36A Mounting: SMD Case: U-DFN2020-6 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP4047SK3-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -18A; 1.6W; TO252 Kind of package: reel; tape Drain-source voltage: -40V Drain current: -18A On-state resistance: 55mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: TO252 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1541 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP4047SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -26A; 1.1W; SO8 Kind of package: reel; tape Drain-source voltage: -40V Drain current: -5.2A On-state resistance: 55mΩ Type of transistor: P-MOSFET Power dissipation: 1.1W Polarisation: unipolar Gate charge: 21.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -26A Mounting: SMD Case: SO8 Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP4047SSDQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -26A; 1.1W; SO8 Kind of package: reel; tape Drain-source voltage: -40V Drain current: -5.2A On-state resistance: 55mΩ Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 1.1W Polarisation: unipolar Gate charge: 21.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -26A Mounting: SMD Case: SO8 Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP4050SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET x2; unipolar; -40V; -4A; Idm: -20A; 1.25W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -40V Drain current: -4A Pulsed drain current: -20A Power dissipation: 1.25W Case: SO8 Gate-source voltage: ±20V On-state resistance: 79mΩ Mounting: SMD Gate charge: 13.9nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP4050SSDQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET x2; unipolar; -40V; -4.1A; 1.25W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -40V Drain current: -4.1A Power dissipation: 1.25W Case: SO8 Gate-source voltage: ±20V On-state resistance: 79mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP4050SSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -4.7A; 1.56W; SO8 Case: SO8 Mounting: SMD Drain-source voltage: -40V Drain current: -4.7A On-state resistance: 79mΩ Type of transistor: P-MOSFET Power dissipation: 1.56W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP4051LK3-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -8.4A; 8.9W; TO252 Kind of package: reel; tape Drain-source voltage: -40V Drain current: -8.4A On-state resistance: 85mΩ Type of transistor: P-MOSFET Power dissipation: 8.9W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: TO252 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5088 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP4051LK3Q-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -8.4A; 8.9W; TO252 Kind of package: reel; tape Drain-source voltage: -40V Drain current: -8.4A On-state resistance: 85mΩ Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 8.9W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: TO252 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP4065S-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -2.7A; Idm: -20A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -2.7A Pulsed drain current: -20A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 12.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP4065S-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -3A; 0.72W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -3A Power dissipation: 0.72W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 985 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP4065SQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -2.7A; Idm: -20A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -2.7A Pulsed drain current: -20A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 12.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP4065SQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -2.7A; Idm: -20A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -2.7A Pulsed drain current: -20A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 12.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP45H150DHE-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -450V; -200mA; Idm: -0.45A; 13.9W Case: SOT223 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -450V Drain current: -200mA On-state resistance: 150Ω Type of transistor: P-MOSFET Power dissipation: 13.9W Polarisation: unipolar Gate charge: 1.8nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: -0.45A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP45H21DHE-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -450V; -400mA; Idm: -1.2A; 8W Case: SOT223 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -450V Drain current: -400mA On-state resistance: 21Ω Type of transistor: P-MOSFET Power dissipation: 8W Polarisation: unipolar Gate charge: 4.2nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: -1.2A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP45H4D9HJ3 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -22.4A; 41W; TO251 Case: TO251 Mounting: THT Kind of package: tube Drain-source voltage: -450V Drain current: -3A On-state resistance: 4.9Ω Type of transistor: P-MOSFET Power dissipation: 41W Polarisation: unipolar Gate charge: 13.7nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: -22.4A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 414 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP45H4D9HK3-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -12A; 41W; TO252 Case: TO252 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -450V Drain current: -3A On-state resistance: 4.9Ω Type of transistor: P-MOSFET Power dissipation: 41W Polarisation: unipolar Gate charge: 13.7nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: -12A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP510DL-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -1.2A; 500mW Case: SOT23 Mounting: SMD Kind of package: reel; tape Pulsed drain current: -1.2A Power dissipation: 0.5W Polarisation: unipolar Drain current: -130mA Kind of channel: enhanced Drain-source voltage: -50V Type of transistor: P-MOSFET Gate-source voltage: ±30V On-state resistance: 10Ω Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP510DL-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -1.2A; 500mW Mounting: SMD Case: SOT23 Kind of package: reel; tape Pulsed drain current: -1.2A Power dissipation: 0.5W Polarisation: unipolar Drain current: -0.13A Kind of channel: enhanced Drain-source voltage: -50V Type of transistor: P-MOSFET Gate-source voltage: ±30V On-state resistance: 10Ω Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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DMP56D0UFB-7 | DIODES INCORPORATED |
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DMP56D0UFB-7B | DIODES INCORPORATED |
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DMP56D0UV-7 | DIODES INCORPORATED |
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DMP58D0LFB-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -0.5A; 1.22W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -0.25A Pulsed drain current: -0.5A Power dissipation: 1.22W Case: X1-DFN1006-3 Gate-source voltage: ±20V On-state resistance: 18Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMP58D0SV-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.16A; 0.4W; SOT563 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -50V Drain current: -0.16A Power dissipation: 0.4W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP6018LPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W Mounting: SMD Case: PowerDI5060-8 Drain-source voltage: -60V Power dissipation: 2.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 13.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -240A On-state resistance: 26mΩ Type of transistor: P-MOSFET Drain current: -48A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP6018LPSQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W Mounting: SMD Application: automotive industry Case: PowerDI5060-8 Drain-source voltage: -60V Power dissipation: 2.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 13.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -240A On-state resistance: 26mΩ Type of transistor: P-MOSFET Drain current: -48A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP6023LEQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -50A; 1.3W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.6A Pulsed drain current: -50A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 53.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP6023LFG-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6.2A Pulsed drain current: -55A Power dissipation: 1W Case: PowerDI®3333-8 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP6023LFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -8.2A Pulsed drain current: -55A Power dissipation: 2.1W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Gate charge: 53.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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DMP6023LFGQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -8.2A Pulsed drain current: -55A Power dissipation: 2.1W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Gate charge: 53.1nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMP6023LFGQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6.2A Pulsed drain current: -55A Power dissipation: 1W Case: PowerDI®3333-8 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP6023LSS-13 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMP6050SFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -3.9A; Idm: -32A; 1.1W Mounting: SMD Case: PowerDI®3333-8 Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -32A Drain-source voltage: -60V Drain current: -3.9A On-state resistance: 50mΩ Type of transistor: P-MOSFET Power dissipation: 1.1W Polarisation: unipolar Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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DMP6050SPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -4.5A; Idm: -45A; 2.4W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -45A Drain-source voltage: -60V Drain current: -4.5A On-state resistance: 70mΩ Type of transistor: P-MOSFET Power dissipation: 2.4W Polarisation: unipolar Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP6050SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.9A Pulsed drain current: -32A Power dissipation: 1.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 518 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP610DL-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW Case: SOT23 Mounting: SMD Kind of package: reel; tape Pulsed drain current: -1.2A Power dissipation: 0.5W Gate charge: 560pC Polarisation: unipolar Drain current: -130mA Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±30V On-state resistance: 10Ω Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP610DL-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW Mounting: SMD Case: SOT23 Kind of package: reel; tape Pulsed drain current: -1.2A Power dissipation: 0.5W Gate charge: 560pC Polarisation: unipolar Drain current: -0.13A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±30V On-state resistance: 10Ω Anzahl je Verpackung: 20 Stücke |
Produkt ist nicht verfügbar |
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DMP610DLQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW Mounting: SMD Case: SOT23 Kind of package: reel; tape Pulsed drain current: -1.2A Power dissipation: 0.5W Gate charge: 560pC Polarisation: unipolar Drain current: -0.13A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±30V On-state resistance: 10Ω Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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DMP6110SFDF-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W Mounting: SMD Case: U-DFN2020-6 Power dissipation: 1.3W Kind of package: reel; tape Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 0.13Ω Pulsed drain current: -20A Gate charge: 17.2nC Polarisation: unipolar Drain current: -3.4A Kind of channel: enhanced Drain-source voltage: -60V Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP6110SFDF-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W Mounting: SMD Case: U-DFN2020-6 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 1.3W Pulsed drain current: -20A Gate-source voltage: ±20V Type of transistor: P-MOSFET Drain-source voltage: -60V Drain current: -3.4A On-state resistance: 130mΩ Gate charge: 17.2nC Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMP6110SFDFQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W Mounting: SMD Case: U-DFN2020-6 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 1.3W Pulsed drain current: -20A Gate-source voltage: ±20V Type of transistor: P-MOSFET Drain-source voltage: -60V Drain current: -3.4A On-state resistance: 130mΩ Gate charge: 17.2nC Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMP6110SFDFQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W Mounting: SMD Case: U-DFN2020-6 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 1.3W Pulsed drain current: -20A Gate-source voltage: ±20V Type of transistor: P-MOSFET Drain-source voltage: -60V Drain current: -3.4A On-state resistance: 130mΩ Gate charge: 17.2nC Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMP6110SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET x2; unipolar; -60V; -2.7A; Idm: -24A; 1.2W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.7A Pulsed drain current: -24A Power dissipation: 1.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.105Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP6110SSDQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -2.7A; Idm: -24A; 900mW; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 900mW Pulsed drain current: -24A Gate-source voltage: ±20V Type of transistor: P-MOSFET Drain-source voltage: -60V Drain current: -2.7A On-state resistance: 130mΩ Gate charge: 17.2nC Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMP6110SSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -3.6A; Idm: -19A; 2W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape On-state resistance: 130mΩ Polarisation: unipolar Kind of channel: enhanced Power dissipation: 2W Drain current: -3.6A Drain-source voltage: -60V Pulsed drain current: -19A Gate-source voltage: ±20V Type of transistor: P-MOSFET Gate charge: 19.4nC |
Produkt ist nicht verfügbar |
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DMP6110SSSQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -3.6A; Idm: -19A; 2W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape On-state resistance: 130mΩ Polarisation: unipolar Kind of channel: enhanced Power dissipation: 2W Drain current: -3.6A Drain-source voltage: -60V Pulsed drain current: -19A Gate-source voltage: ±20V Type of transistor: P-MOSFET Gate charge: 19.4nC |
Produkt ist nicht verfügbar |
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DMP6110SVT-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -5.8A; Idm: -24A; 1.1W; TSOT26 Mounting: SMD Case: TSOT26 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 1.1W Pulsed drain current: -24A Gate-source voltage: ±20V Type of transistor: P-MOSFET Drain-source voltage: -60V Drain current: -5.8A On-state resistance: 130mΩ Gate charge: 17.2nC Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMP6110SVT-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -6.5A; 1.2W; TSOT26 Mounting: SMD Case: TSOT26 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 1.2W Gate-source voltage: ±20V Type of transistor: P-MOSFET Drain-source voltage: -60V Drain current: -6.5A On-state resistance: 0.13Ω Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMP6110SVTQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -5.8A; Idm: -24A; 1.1W; TSOT26 Mounting: SMD Case: TSOT26 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 1.1W Pulsed drain current: -24A Gate-source voltage: ±20V Type of transistor: P-MOSFET Drain-source voltage: -60V Drain current: -5.8A On-state resistance: 130mΩ Gate charge: 17.2nC Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DMP6110SVTQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -6.5A; 1.2W; TSOT26 Mounting: SMD Case: TSOT26 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 1.2W Gate-source voltage: ±20V Application: automotive industry Type of transistor: P-MOSFET Drain-source voltage: -60V Drain current: -6.5A On-state resistance: 0.13Ω Polarisation: unipolar |
auf Bestellung 2970 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP6180SK3Q-13 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMP6185SE-13 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMP6185SEQ-13 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMP6185SK3-13 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMP6250SE-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -1.7A; Idm: -11A; 1.1W; SOT223 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.1W Polarisation: unipolar Gate charge: 9.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -11A Case: SOT223 Drain-source voltage: -60V Drain current: -1.7A On-state resistance: 0.3Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP6350S-13 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMP6350S-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -1.2A; Idm: -6A; 0.72W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.2A Pulsed drain current: -6A Power dissipation: 0.72W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.35Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3384 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP6350SQ-13 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMP6350SQ-7 | DIODES INCORPORATED |
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Produkt ist nicht verfügbar |
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DMP68D1LFB-7B | DIODES INCORPORATED | DMP68D1LFB-7B SMD P channel transistors |
Produkt ist nicht verfügbar |
DMP4047LFDEQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -5.2A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 24.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -36A
Mounting: SMD
Case: U-DFN2020-6
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -36A; 2.1W
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -5.2A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Gate charge: 24.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -36A
Mounting: SMD
Case: U-DFN2020-6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP4047SK3-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -18A; 1.6W; TO252
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -18A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO252
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -18A; 1.6W; TO252
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -18A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO252
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1541 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
114+ | 0.63 EUR |
258+ | 0.28 EUR |
272+ | 0.26 EUR |
12500+ | 0.25 EUR |
DMP4047SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -26A; 1.1W; SO8
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -5.2A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 21.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -26A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -26A; 1.1W; SO8
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -5.2A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 21.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -26A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP4047SSDQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -26A; 1.1W; SO8
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -5.2A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 21.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -26A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -26A; 1.1W; SO8
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -5.2A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 21.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -26A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP4050SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -40V; -4A; Idm: -20A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4A
Pulsed drain current: -20A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 79mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -40V; -4A; Idm: -20A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4A
Pulsed drain current: -20A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 79mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP4050SSDQ-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -40V; -4.1A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.1A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 79mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -40V; -4.1A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.1A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 79mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP4050SSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.7A; 1.56W; SO8
Case: SO8
Mounting: SMD
Drain-source voltage: -40V
Drain current: -4.7A
On-state resistance: 79mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.7A; 1.56W; SO8
Case: SO8
Mounting: SMD
Drain-source voltage: -40V
Drain current: -4.7A
On-state resistance: 79mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP4051LK3-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.4A; 8.9W; TO252
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -8.4A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Power dissipation: 8.9W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO252
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.4A; 8.9W; TO252
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -8.4A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Power dissipation: 8.9W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO252
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5088 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
193+ | 0.37 EUR |
211+ | 0.34 EUR |
278+ | 0.26 EUR |
295+ | 0.24 EUR |
2500+ | 0.23 EUR |
DMP4051LK3Q-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.4A; 8.9W; TO252
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -8.4A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 8.9W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO252
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.4A; 8.9W; TO252
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -8.4A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 8.9W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO252
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP4065S-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -2.7A; Idm: -20A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -2.7A
Pulsed drain current: -20A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -2.7A; Idm: -20A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -2.7A
Pulsed drain current: -20A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP4065S-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3A; 0.72W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3A; 0.72W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 985 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
340+ | 0.21 EUR |
560+ | 0.13 EUR |
625+ | 0.11 EUR |
715+ | 0.1 EUR |
760+ | 0.094 EUR |
DMP4065SQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -2.7A; Idm: -20A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -2.7A
Pulsed drain current: -20A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -2.7A; Idm: -20A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -2.7A
Pulsed drain current: -20A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP4065SQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -2.7A; Idm: -20A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -2.7A
Pulsed drain current: -20A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -2.7A; Idm: -20A; 1.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -2.7A
Pulsed drain current: -20A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP45H150DHE-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -200mA; Idm: -0.45A; 13.9W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -450V
Drain current: -200mA
On-state resistance: 150Ω
Type of transistor: P-MOSFET
Power dissipation: 13.9W
Polarisation: unipolar
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -0.45A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -200mA; Idm: -0.45A; 13.9W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -450V
Drain current: -200mA
On-state resistance: 150Ω
Type of transistor: P-MOSFET
Power dissipation: 13.9W
Polarisation: unipolar
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -0.45A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP45H21DHE-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -400mA; Idm: -1.2A; 8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -450V
Drain current: -400mA
On-state resistance: 21Ω
Type of transistor: P-MOSFET
Power dissipation: 8W
Polarisation: unipolar
Gate charge: 4.2nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -1.2A
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -400mA; Idm: -1.2A; 8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -450V
Drain current: -400mA
On-state resistance: 21Ω
Type of transistor: P-MOSFET
Power dissipation: 8W
Polarisation: unipolar
Gate charge: 4.2nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -1.2A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP45H4D9HJ3 |
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Hersteller: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -22.4A; 41W; TO251
Case: TO251
Mounting: THT
Kind of package: tube
Drain-source voltage: -450V
Drain current: -3A
On-state resistance: 4.9Ω
Type of transistor: P-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Gate charge: 13.7nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -22.4A
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -22.4A; 41W; TO251
Case: TO251
Mounting: THT
Kind of package: tube
Drain-source voltage: -450V
Drain current: -3A
On-state resistance: 4.9Ω
Type of transistor: P-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Gate charge: 13.7nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -22.4A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 414 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
74+ | 0.97 EUR |
106+ | 0.68 EUR |
119+ | 0.6 EUR |
137+ | 0.52 EUR |
145+ | 0.49 EUR |
DMP45H4D9HK3-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -12A; 41W; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -450V
Drain current: -3A
On-state resistance: 4.9Ω
Type of transistor: P-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Gate charge: 13.7nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -12A
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -12A; 41W; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -450V
Drain current: -3A
On-state resistance: 4.9Ω
Type of transistor: P-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Gate charge: 13.7nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -12A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP510DL-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -1.2A; 500mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Polarisation: unipolar
Drain current: -130mA
Kind of channel: enhanced
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±30V
On-state resistance: 10Ω
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -1.2A; 500mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Polarisation: unipolar
Drain current: -130mA
Kind of channel: enhanced
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±30V
On-state resistance: 10Ω
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP510DL-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -1.2A; 500mW
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Polarisation: unipolar
Drain current: -0.13A
Kind of channel: enhanced
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±30V
On-state resistance: 10Ω
Anzahl je Verpackung: 10 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -130mA; Idm: -1.2A; 500mW
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Polarisation: unipolar
Drain current: -0.13A
Kind of channel: enhanced
Drain-source voltage: -50V
Type of transistor: P-MOSFET
Gate-source voltage: ±30V
On-state resistance: 10Ω
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
DMP56D0UFB-7 |
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Hersteller: DIODES INCORPORATED
DMP56D0UFB-7 SMD P channel transistors
DMP56D0UFB-7 SMD P channel transistors
Produkt ist nicht verfügbar
DMP56D0UFB-7B |
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Hersteller: DIODES INCORPORATED
DMP56D0UFB-7B SMD P channel transistors
DMP56D0UFB-7B SMD P channel transistors
Produkt ist nicht verfügbar
DMP56D0UV-7 |
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Hersteller: DIODES INCORPORATED
DMP56D0UV-7 SMD P channel transistors
DMP56D0UV-7 SMD P channel transistors
Produkt ist nicht verfügbar
DMP58D0LFB-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -0.5A; 1.22W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.25A
Pulsed drain current: -0.5A
Power dissipation: 1.22W
Case: X1-DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 18Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -0.5A; 1.22W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.25A
Pulsed drain current: -0.5A
Power dissipation: 1.22W
Case: X1-DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 18Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMP58D0SV-7 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.16A; 0.4W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.16A
Power dissipation: 0.4W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.16A; 0.4W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.16A
Power dissipation: 0.4W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP6018LPS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Drain-source voltage: -60V
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -240A
On-state resistance: 26mΩ
Type of transistor: P-MOSFET
Drain current: -48A
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W
Mounting: SMD
Case: PowerDI5060-8
Drain-source voltage: -60V
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -240A
On-state resistance: 26mΩ
Type of transistor: P-MOSFET
Drain current: -48A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP6018LPSQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W
Mounting: SMD
Application: automotive industry
Case: PowerDI5060-8
Drain-source voltage: -60V
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -240A
On-state resistance: 26mΩ
Type of transistor: P-MOSFET
Drain current: -48A
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -48A; Idm: -240A; 2.6W
Mounting: SMD
Application: automotive industry
Case: PowerDI5060-8
Drain-source voltage: -60V
Power dissipation: 2.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -240A
On-state resistance: 26mΩ
Type of transistor: P-MOSFET
Drain current: -48A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP6023LEQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -50A; 1.3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -50A; 1.3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -50A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP6023LFG-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.2A
Pulsed drain current: -55A
Power dissipation: 1W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.2A
Pulsed drain current: -55A
Power dissipation: 1W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP6023LFG-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.2A
Pulsed drain current: -55A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.2A
Pulsed drain current: -55A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
DMP6023LFGQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.2A
Pulsed drain current: -55A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.2A; Idm: -55A; 2.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.2A
Pulsed drain current: -55A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 53.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMP6023LFGQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.2A
Pulsed drain current: -55A
Power dissipation: 1W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.2A
Pulsed drain current: -55A
Power dissipation: 1W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP6023LSS-13 |
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Hersteller: DIODES INCORPORATED
DMP6023LSS-13 SMD P channel transistors
DMP6023LSS-13 SMD P channel transistors
Produkt ist nicht verfügbar
DMP6050SFG-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.9A; Idm: -32A; 1.1W
Mounting: SMD
Case: PowerDI®3333-8
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -32A
Drain-source voltage: -60V
Drain current: -3.9A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Anzahl je Verpackung: 2000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.9A; Idm: -32A; 1.1W
Mounting: SMD
Case: PowerDI®3333-8
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -32A
Drain-source voltage: -60V
Drain current: -3.9A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
DMP6050SPS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.5A; Idm: -45A; 2.4W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -45A
Drain-source voltage: -60V
Drain current: -4.5A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.5A; Idm: -45A; 2.4W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -45A
Drain-source voltage: -60V
Drain current: -4.5A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP6050SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.9A
Pulsed drain current: -32A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.9A
Pulsed drain current: -32A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 518 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 1.14 EUR |
121+ | 0.59 EUR |
137+ | 0.52 EUR |
158+ | 0.45 EUR |
167+ | 0.43 EUR |
DMP610DL-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Gate charge: 560pC
Polarisation: unipolar
Drain current: -130mA
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±30V
On-state resistance: 10Ω
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Gate charge: 560pC
Polarisation: unipolar
Drain current: -130mA
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±30V
On-state resistance: 10Ω
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP610DL-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Gate charge: 560pC
Polarisation: unipolar
Drain current: -0.13A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±30V
On-state resistance: 10Ω
Anzahl je Verpackung: 20 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Gate charge: 560pC
Polarisation: unipolar
Drain current: -0.13A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±30V
On-state resistance: 10Ω
Anzahl je Verpackung: 20 Stücke
Produkt ist nicht verfügbar
DMP610DLQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Gate charge: 560pC
Polarisation: unipolar
Drain current: -0.13A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±30V
On-state resistance: 10Ω
Anzahl je Verpackung: 10 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -130mA; Idm: -1.2A; 500mW
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Pulsed drain current: -1.2A
Power dissipation: 0.5W
Gate charge: 560pC
Polarisation: unipolar
Drain current: -0.13A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±30V
On-state resistance: 10Ω
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
DMP6110SFDF-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Power dissipation: 1.3W
Kind of package: reel; tape
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Pulsed drain current: -20A
Gate charge: 17.2nC
Polarisation: unipolar
Drain current: -3.4A
Kind of channel: enhanced
Drain-source voltage: -60V
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Power dissipation: 1.3W
Kind of package: reel; tape
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Pulsed drain current: -20A
Gate charge: 17.2nC
Polarisation: unipolar
Drain current: -3.4A
Kind of channel: enhanced
Drain-source voltage: -60V
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
DMP6110SFDF-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 1.3W
Pulsed drain current: -20A
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 130mΩ
Gate charge: 17.2nC
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 1.3W
Pulsed drain current: -20A
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 130mΩ
Gate charge: 17.2nC
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP6110SFDFQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 1.3W
Pulsed drain current: -20A
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 130mΩ
Gate charge: 17.2nC
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 1.3W
Pulsed drain current: -20A
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 130mΩ
Gate charge: 17.2nC
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP6110SFDFQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 1.3W
Pulsed drain current: -20A
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 130mΩ
Gate charge: 17.2nC
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 1.3W
Pulsed drain current: -20A
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 130mΩ
Gate charge: 17.2nC
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP6110SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2.7A; Idm: -24A; 1.2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.7A
Pulsed drain current: -24A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2.7A; Idm: -24A; 1.2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.7A
Pulsed drain current: -24A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP6110SSDQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.7A; Idm: -24A; 900mW; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 900mW
Pulsed drain current: -24A
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -2.7A
On-state resistance: 130mΩ
Gate charge: 17.2nC
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.7A; Idm: -24A; 900mW; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 900mW
Pulsed drain current: -24A
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -2.7A
On-state resistance: 130mΩ
Gate charge: 17.2nC
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP6110SSS-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.6A; Idm: -19A; 2W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
On-state resistance: 130mΩ
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 2W
Drain current: -3.6A
Drain-source voltage: -60V
Pulsed drain current: -19A
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Gate charge: 19.4nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.6A; Idm: -19A; 2W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
On-state resistance: 130mΩ
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 2W
Drain current: -3.6A
Drain-source voltage: -60V
Pulsed drain current: -19A
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Gate charge: 19.4nC
Produkt ist nicht verfügbar
DMP6110SSSQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.6A; Idm: -19A; 2W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
On-state resistance: 130mΩ
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 2W
Drain current: -3.6A
Drain-source voltage: -60V
Pulsed drain current: -19A
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Gate charge: 19.4nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.6A; Idm: -19A; 2W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
On-state resistance: 130mΩ
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 2W
Drain current: -3.6A
Drain-source voltage: -60V
Pulsed drain current: -19A
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Gate charge: 19.4nC
Produkt ist nicht verfügbar
DMP6110SVT-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.8A; Idm: -24A; 1.1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 1.1W
Pulsed drain current: -24A
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -5.8A
On-state resistance: 130mΩ
Gate charge: 17.2nC
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.8A; Idm: -24A; 1.1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 1.1W
Pulsed drain current: -24A
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -5.8A
On-state resistance: 130mΩ
Gate charge: 17.2nC
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP6110SVT-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.5A; 1.2W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 1.2W
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -6.5A
On-state resistance: 0.13Ω
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.5A; 1.2W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 1.2W
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -6.5A
On-state resistance: 0.13Ω
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP6110SVTQ-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.8A; Idm: -24A; 1.1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 1.1W
Pulsed drain current: -24A
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -5.8A
On-state resistance: 130mΩ
Gate charge: 17.2nC
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.8A; Idm: -24A; 1.1W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 1.1W
Pulsed drain current: -24A
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -5.8A
On-state resistance: 130mΩ
Gate charge: 17.2nC
Polarisation: unipolar
Produkt ist nicht verfügbar
DMP6110SVTQ-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.5A; 1.2W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 1.2W
Gate-source voltage: ±20V
Application: automotive industry
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -6.5A
On-state resistance: 0.13Ω
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.5A; 1.2W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 1.2W
Gate-source voltage: ±20V
Application: automotive industry
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Drain current: -6.5A
On-state resistance: 0.13Ω
Polarisation: unipolar
auf Bestellung 2970 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
61+ | 1.18 EUR |
152+ | 0.47 EUR |
172+ | 0.42 EUR |
207+ | 0.35 EUR |
219+ | 0.33 EUR |
DMP6180SK3Q-13 |
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Hersteller: DIODES INCORPORATED
DMP6180SK3Q-13 SMD P channel transistors
DMP6180SK3Q-13 SMD P channel transistors
Produkt ist nicht verfügbar
DMP6185SE-13 |
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Hersteller: DIODES INCORPORATED
DMP6185SE-13 SMD P channel transistors
DMP6185SE-13 SMD P channel transistors
Produkt ist nicht verfügbar
DMP6185SEQ-13 |
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Hersteller: DIODES INCORPORATED
DMP6185SEQ-13 SMD P channel transistors
DMP6185SEQ-13 SMD P channel transistors
Produkt ist nicht verfügbar
DMP6185SK3-13 |
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Hersteller: DIODES INCORPORATED
DMP6185SK3-13 SMD P channel transistors
DMP6185SK3-13 SMD P channel transistors
Produkt ist nicht verfügbar
DMP6250SE-13 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.7A; Idm: -11A; 1.1W; SOT223
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 9.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -11A
Case: SOT223
Drain-source voltage: -60V
Drain current: -1.7A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.7A; Idm: -11A; 1.1W; SOT223
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 9.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -11A
Case: SOT223
Drain-source voltage: -60V
Drain current: -1.7A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP6350S-13 |
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Hersteller: DIODES INCORPORATED
DMP6350S-13 SMD P channel transistors
DMP6350S-13 SMD P channel transistors
Produkt ist nicht verfügbar
DMP6350S-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.2A; Idm: -6A; 0.72W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.2A
Pulsed drain current: -6A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.2A; Idm: -6A; 0.72W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.2A
Pulsed drain current: -6A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3384 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
136+ | 0.53 EUR |
172+ | 0.42 EUR |
233+ | 0.31 EUR |
328+ | 0.22 EUR |
347+ | 0.21 EUR |
355+ | 0.2 EUR |
DMP6350SQ-13 |
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Hersteller: DIODES INCORPORATED
DMP6350SQ-13 SMD P channel transistors
DMP6350SQ-13 SMD P channel transistors
Produkt ist nicht verfügbar
DMP6350SQ-7 |
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Hersteller: DIODES INCORPORATED
DMP6350SQ-7 SMD P channel transistors
DMP6350SQ-7 SMD P channel transistors
Produkt ist nicht verfügbar
DMP68D1LFB-7B |
Hersteller: DIODES INCORPORATED
DMP68D1LFB-7B SMD P channel transistors
DMP68D1LFB-7B SMD P channel transistors
Produkt ist nicht verfügbar