DMP45H150DHE-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 450V 250MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Tc)
Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V
Power Dissipation (Max): 13.9W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 59.2 pF @ 25 V
Description: MOSFET P-CH 450V 250MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Tc)
Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V
Power Dissipation (Max): 13.9W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 59.2 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP45H150DHE-13 Diodes Incorporated
Description: DIODES INC. - DMP45H150DHE-13 - Leistungs-MOSFET, p-Kanal, 450 V, 250 mA, 40 ohm, SOT-223, Oberflächenmontage, tariffCode: 85411000, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 450V, rohsCompliant: YES, Dauer-Drainstrom Id: 250mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 13.9W, Bauform - Transistor: SOT-223, Anzahl der Pins: 3Pin(s), Produktpalette: TUK SGACK902S Keystone Coupler, productTraceability: No, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 40ohm, SVHC: No SVHC (23-Jan-2024).
Weitere Produktangebote DMP45H150DHE-13 nach Preis ab 0.26 EUR bis 0.8 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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DMP45H150DHE-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 450V 250MA SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Tc) Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V Power Dissipation (Max): 13.9W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 450 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 59.2 pF @ 25 V |
auf Bestellung 3829 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP45H150DHE-13 | Hersteller : Diodes Incorporated | MOSFET MOSFET BVDSS: 251V-500V |
auf Bestellung 5487 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP45H150DHE-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMP45H150DHE-13 - Leistungs-MOSFET, p-Kanal, 450 V, 250 mA, 40 ohm, SOT-223, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 450V rohsCompliant: YES Dauer-Drainstrom Id: 250mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 13.9W Bauform - Transistor: SOT-223 Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 40ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 2360 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP45H150DHE-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMP45H150DHE-13 - Leistungs-MOSFET, p-Kanal, 450 V, 250 mA, 40 ohm, SOT-223, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 450V rohsCompliant: YES Dauer-Drainstrom Id: 250mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 13.9W Bauform - Transistor: SOT-223 Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 40ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 2360 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP45H150DHE-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -450V; -200mA; Idm: -0.45A; 13.9W Case: SOT223 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -450V Drain current: -200mA On-state resistance: 150Ω Type of transistor: P-MOSFET Power dissipation: 13.9W Polarisation: unipolar Gate charge: 1.8nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: -0.45A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP45H150DHE-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -450V; -200mA; Idm: -0.45A; 13.9W Case: SOT223 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -450V Drain current: -200mA On-state resistance: 150Ω Type of transistor: P-MOSFET Power dissipation: 13.9W Polarisation: unipolar Gate charge: 1.8nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: -0.45A |
Produkt ist nicht verfügbar |