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DMP4047SSDQ-13

DMP4047SSDQ-13 Diodes Zetex


dmp4047ssd.pdf Hersteller: Diodes Zetex
Trans MOSFET P-CH 40V 4.6A Automotive AEC-Q101 8-Pin SO T/R
auf Bestellung 145000 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2500+0.43 EUR
Mindestbestellmenge: 2500
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Technische Details DMP4047SSDQ-13 Diodes Zetex

Description: MOSFET 2P-CH 40V 5.1A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W (Ta), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1154pF @ 20V, Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMP4047SSDQ-13 nach Preis ab 0.46 EUR bis 1.39 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMP4047SSDQ-13 DMP4047SSDQ-13 Hersteller : Diodes Incorporated DMP4047SSD.pdf Description: MOSFET 2P-CH 40V 5.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1154pF @ 20V
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 135000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.53 EUR
5000+ 0.5 EUR
12500+ 0.46 EUR
Mindestbestellmenge: 2500
DMP4047SSDQ-13 DMP4047SSDQ-13 Hersteller : Diodes Incorporated DMP4047SSD.pdf Description: MOSFET 2P-CH 40V 5.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1154pF @ 20V
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 137490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.39 EUR
15+ 1.2 EUR
100+ 0.83 EUR
500+ 0.69 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 13
DMP4047SSDQ-13 DMP4047SSDQ-13 Hersteller : Diodes Zetex dmp4047ssd.pdf Trans MOSFET P-CH 40V 4.6A Automotive AEC-Q101 8-Pin SO T/R
Produkt ist nicht verfügbar
DMP4047SSDQ-13 DMP4047SSDQ-13 Hersteller : Diodes Inc dmp4047ssd.pdf Trans MOSFET P-CH 40V 4.6A Automotive 8-Pin SO T/R
Produkt ist nicht verfügbar
DMP4047SSDQ-13 DMP4047SSDQ-13 Hersteller : DIODES INCORPORATED DMP4047SSD.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -26A; 1.1W; SO8
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -5.2A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 21.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -26A
Mounting: SMD
Case: SO8
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMP4047SSDQ-13 Hersteller : Diodes Incorporated DIODS20339_1-2541940.pdf MOSFET MOSFET BVDSS: 31V-40V SO-8 T&R 2.5K
Produkt ist nicht verfügbar
DMP4047SSDQ-13 DMP4047SSDQ-13 Hersteller : DIODES INCORPORATED DMP4047SSD.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.2A; Idm: -26A; 1.1W; SO8
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -5.2A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.1W
Polarisation: unipolar
Gate charge: 21.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -26A
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar