DMP58D0LFB-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 50V 180MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V
Description: MOSFET P-CH 50V 180MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.15 EUR |
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Technische Details DMP58D0LFB-7 Diodes Incorporated
Description: MOSFET P-CH 50V 180MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 180mA (Ta), Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V, Power Dissipation (Max): 470mW (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: X1-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V.
Weitere Produktangebote DMP58D0LFB-7 nach Preis ab 0.17 EUR bis 0.67 EUR
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DMP58D0LFB-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 50V 180MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V |
auf Bestellung 10693 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP58D0LFB-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -0.5A; 1.22W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -0.25A Pulsed drain current: -0.5A Power dissipation: 1.22W Case: X1-DFN1006-3 Gate-source voltage: ±20V On-state resistance: 18Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMP58D0LFB-7 | Hersteller : Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 X1-DFN1006-3 T&R 3K |
Produkt ist nicht verfügbar |
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| DMP58D0LFB-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -250mA; Idm: -0.5A; 1.22W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -0.25A Pulsed drain current: -0.5A Power dissipation: 1.22W Case: X1-DFN1006-3 Gate-source voltage: ±20V On-state resistance: 18Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |