DMP6110SFDF-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 60V 4.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.97W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1373900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.25 EUR |
| 6000+ | 0.24 EUR |
| 9000+ | 0.22 EUR |
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Technische Details DMP6110SFDF-7 Diodes Incorporated
Description: DIODES INC. - DMP6110SFDF-7 - Leistungs-MOSFET, p-Kanal, 60 V, 3.5 A, 0.11 ohm, UDFN2020, Oberflächenmontage, tariffCode: 85412100, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 3.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 1.97W, Bauform - Transistor: UDFN2020, Anzahl der Pins: 6Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.11ohm, SVHC: No SVHC (23-Jan-2024).
Weitere Produktangebote DMP6110SFDF-7 nach Preis ab 0.22 EUR bis 0.75 EUR
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DMP6110SFDF-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 60V 4.2A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V Power Dissipation (Max): 1.97W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1373996 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6110SFDF-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V |
auf Bestellung 72569 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6110SFDF-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMP6110SFDF-7 - Leistungs-MOSFET, p-Kanal, 60 V, 3.5 A, 0.11 ohm, UDFN2020, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 3.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 1.97W Bauform - Transistor: UDFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.11ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 3160 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP6110SFDF-7 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 60V 3.5A 6-Pin UDFN EP T/R |
Produkt ist nicht verfügbar |
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| DMP6110SFDF-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W Mounting: SMD Case: U-DFN2020-6 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 1.3W Pulsed drain current: -20A Gate-source voltage: ±20V Type of transistor: P-MOSFET Drain-source voltage: -60V Drain current: -3.4A On-state resistance: 130mΩ Gate charge: 17.2nC Polarisation: unipolar |
Produkt ist nicht verfügbar |
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| DMP6110SFDF-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W Mounting: SMD Case: U-DFN2020-6 Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 1.3W Pulsed drain current: -20A Gate-source voltage: ±20V Type of transistor: P-MOSFET Drain-source voltage: -60V Drain current: -3.4A On-state resistance: 130mΩ Gate charge: 17.2nC Polarisation: unipolar |
Produkt ist nicht verfügbar |