DMP58D0SV-7 DIODES INCORPORATED
Hersteller: DIODES INCORPORATEDCategory: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.16A; 0.4W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.16A
Power dissipation: 0.4W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
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Technische Details DMP58D0SV-7 DIODES INCORPORATED
Description: MOSFET 2P-CH 50V 0.16A SOT-563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 400mW, Drain to Source Voltage (Vdss): 50V, Current - Continuous Drain (Id) @ 25°C: 160mA, Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 25V, Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SOT-563.
Weitere Produktangebote DMP58D0SV-7
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DMP58D0SV-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2P-CH 50V 0.16A SOT-563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 400mW Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 160mA Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 25V Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-563 |
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DMP58D0SV-7 | Hersteller : Diodes Incorporated |
MOSFET PMOS-Dual |
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DMP58D0SV-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.16A; 0.4W; SOT563 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -50V Drain current: -0.16A Power dissipation: 0.4W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |