Produkte > DIODES INCORPORATED > DMP56D0UFB-7B
DMP56D0UFB-7B

DMP56D0UFB-7B Diodes Incorporated

DMP56D0UFB.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CH 50V 200MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 4V
Power Dissipation (Max): 425mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.58 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 50.54 pF @ 25 V
auf Bestellung 280000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.14 EUR
50000+ 0.13 EUR
Mindestbestellmenge: 10000
Produktrezensionen
Produktbewertung abgeben

Technische Details DMP56D0UFB-7B Diodes Incorporated

Description: MOSFET P-CH 50V 200MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 4V, Power Dissipation (Max): 425mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: X1-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 0.58 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 50.54 pF @ 25 V.

Weitere Produktangebote DMP56D0UFB-7B nach Preis ab 0.13 EUR bis 0.6 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMP56D0UFB-7B DMP56D0UFB-7B Hersteller : Diodes Incorporated DMP56D0UFB.pdf MOSFET P-CH ENHANCEMENT MODE MOSFET
auf Bestellung 127602 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+0.43 EUR
10+ 0.32 EUR
100+ 0.18 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 7
DMP56D0UFB-7B DMP56D0UFB-7B Hersteller : Diodes Incorporated DMP56D0UFB.pdf Description: MOSFET P-CH 50V 200MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 4V
Power Dissipation (Max): 425mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.58 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 50.54 pF @ 25 V
auf Bestellung 291273 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
38+ 0.47 EUR
100+ 0.28 EUR
500+ 0.26 EUR
1000+ 0.18 EUR
2000+ 0.16 EUR
Mindestbestellmenge: 30
DMP56D0UFB-7B Hersteller : DIODES INCORPORATED DMP56D0UFB.pdf DMP56D0UFB-7B SMD P channel transistors
Produkt ist nicht verfügbar