DMP6250SE-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 60V 2.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Power Dissipation (Max): 1.8W (Ta), 14W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.44 EUR |
| 5000+ | 0.42 EUR |
| 12500+ | 0.38 EUR |
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Technische Details DMP6250SE-13 Diodes Incorporated
Description: MOSFET P-CH 60V 2.1A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V, Power Dissipation (Max): 1.8W (Ta), 14W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 30 V.
Weitere Produktangebote DMP6250SE-13 nach Preis ab 0.44 EUR bis 1.16 EUR
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DMP6250SE-13 | Hersteller : Diodes Incorporated |
MOSFET FET BVDSS 41V 60V P-Ch 6.1A 250Vgs |
auf Bestellung 10106 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP6250SE-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 60V 2.1A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V Power Dissipation (Max): 1.8W (Ta), 14W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 30 V |
auf Bestellung 15887 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP6250SE-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.7A; Idm: -11A; 1.1W; SOT223 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.1W Polarisation: unipolar Gate charge: 9.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -11A Case: SOT223 Drain-source voltage: -60V Drain current: -1.7A On-state resistance: 0.3Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMP6250SE-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.7A; Idm: -11A; 1.1W; SOT223 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.1W Polarisation: unipolar Gate charge: 9.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -11A Case: SOT223 Drain-source voltage: -60V Drain current: -1.7A On-state resistance: 0.3Ω Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |