Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75997) > Seite 1135 nach 1267
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| DMP1022UFDF-13 | DIODES INCORPORATED |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Power dissipation: 1.3W Gate charge: 48.3nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -90A Case: U-DFN2020-6 Drain-source voltage: -12V Drain current: -8.8A On-state resistance: 32mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMP1022UFDF-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Power dissipation: 1.3W Gate charge: 48.3nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -90A Case: U-DFN2020-6 Drain-source voltage: -12V Drain current: -8.8A On-state resistance: 32mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP1045U-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -3.1A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2635 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP1045UFY4-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.1A Pulsed drain current: -25A Power dissipation: 1.1W Case: X2-DFN2015-3 Gate-source voltage: ±8V On-state resistance: 75mΩ Mounting: SMD Gate charge: 23.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2900 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP1046UFDB-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -15A; 2.2W Mounting: SMD Power dissipation: 2.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 17.9nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -15A Case: U-DFN2020-6 Drain-source voltage: -12V Drain current: -4A On-state resistance: 0.115Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMP1055UFDB-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.89W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar On-state resistance: 0.215Ω Drain current: -4A Drain-source voltage: -12V Gate charge: 20.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -25A Type of transistor: P-MOSFET Case: U-DFN2020-6 Power dissipation: 1.89W Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMP1055USW-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363 Case: SOT363 Mounting: SMD Kind of package: reel; tape Drain current: -3A On-state resistance: 0.15Ω Type of transistor: P-MOSFET Power dissipation: 1.03W Polarisation: unipolar Gate charge: 20.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Drain-source voltage: -12V Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP1055USW-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363 Case: SOT363 Mounting: SMD Kind of package: reel; tape Drain current: -3A On-state resistance: 0.15Ω Type of transistor: P-MOSFET Power dissipation: 1.03W Polarisation: unipolar Gate charge: 20.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -20A Drain-source voltage: -12V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP10H400SE-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -2.1A Power dissipation: 2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1265 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP10H400SEQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223 Case: SOT223 Mounting: SMD Kind of package: reel; tape Application: automotive industry Drain current: -2.1A On-state resistance: 0.3Ω Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -100V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP10H400SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252 Case: TO252 Mounting: SMD Kind of package: reel; tape Drain current: -8A On-state resistance: 0.3Ω Type of transistor: P-MOSFET Power dissipation: 42W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -100V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1469 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP10H4D2S-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -210mA; Idm: -1A; 440mW Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain current: -210mA On-state resistance: 5mΩ Type of transistor: P-MOSFET Power dissipation: 0.44W Polarisation: unipolar Gate charge: 1.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -1A Drain-source voltage: -100V Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP10H4D2S-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -0.21A; 0.38W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Drain current: -210mA On-state resistance: 5Ω Type of transistor: P-MOSFET Power dissipation: 0.38W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -100V Anzahl je Verpackung: 5 Stücke |
auf Bestellung 70 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP1100UCB4-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; Idm: -13A; 1.1W Mounting: SMD Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Case: X2-WLB0808-4 Gate charge: 14nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -13A Drain-source voltage: -12V Drain current: -2.6A On-state resistance: 0.4Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP1200UFR4-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -2A; 1.26W; X2-DFN1010-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -2A Power dissipation: 1.26W Case: X2-DFN1010-3 Gate-source voltage: ±8V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| DMP1245UFCL-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -5.25A; Idm: -16.67A; 1.7W Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -16.67A Case: X1-DFN1616-6 Drain-source voltage: -12V Drain current: -5.25A On-state resistance: 0.1Ω Type of transistor: P-MOSFET Power dissipation: 1.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 26.1nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP1555UFA-7B | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -0.2A; 0.36W; X2-DFN0806-3 Mounting: SMD Case: X2-DFN0806-3 Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Drain-source voltage: -12V Drain current: -200mA On-state resistance: 5Ω Type of transistor: P-MOSFET Power dissipation: 0.36W Polarisation: unipolar Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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| DMP2002UPS-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -33.5A; Idm: -100A; 6.25W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -33.5A On-state resistance: 3.8mΩ Type of transistor: P-MOSFET Power dissipation: 6.25W Polarisation: unipolar Gate charge: 585nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -100A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMP2003UPS-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -120A; Idm: -350A; 2.7W Mounting: SMD Case: PowerDI5060-8 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -120A On-state resistance: 4mΩ Type of transistor: P-MOSFET Power dissipation: 2.7W Polarisation: unipolar Gate charge: 177nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -350A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP2004DMK-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -550mA; Idm: -1.9A; 500mW Mounting: SMD Case: SOT26 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -0.55A On-state resistance: 2mΩ Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -1.9A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2004DWK-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; 250mW; SOT363 Mounting: SMD Case: SOT363 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -310mA On-state resistance: 2mΩ Type of transistor: P-MOSFET Power dissipation: 0.25W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2004K-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23 Mounting: SMD Drain-source voltage: -20V Drain current: -600mA On-state resistance: 2Ω Type of transistor: P-MOSFET Power dissipation: 0.55W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Case: SOT23 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2560 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2004TK-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.75A; 320mW Mounting: SMD Case: SOT523 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -310mA On-state resistance: 2.4mΩ Type of transistor: P-MOSFET Power dissipation: 0.32W Polarisation: unipolar Gate charge: 970pC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -0.75A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP2004UFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -95A Pulsed drain current: -180A Power dissipation: 2.4W Case: PowerDI3333-8 Gate-source voltage: ±12V On-state resistance: 7mΩ Mounting: SMD Gate charge: 83nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2004UFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -95A Pulsed drain current: -180A Power dissipation: 2.4W Case: PowerDI3333-8 Gate-source voltage: ±12V On-state resistance: 7mΩ Mounting: SMD Gate charge: 83nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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DMP2004VK-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.44A; 0.4W; SOT563 Mounting: SMD Case: SOT563 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -440mA On-state resistance: 1.4Ω Type of transistor: P-MOSFET x2 Power dissipation: 0.4W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2004WK-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -400mA; Idm: -1.4A; 250mW Mounting: SMD Case: SOT323 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -400mA On-state resistance: 2mΩ Type of transistor: P-MOSFET Power dissipation: 0.25W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -1.4A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP2005UFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -100A; 2.2W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -15A On-state resistance: 14mΩ Type of transistor: P-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 125nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -100A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2005UFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -100A; 2.2W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -15A On-state resistance: 14mΩ Type of transistor: P-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 125nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -100A Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2006UFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W Mounting: SMD Case: PowerDI®3333-8 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -14A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 200nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -80A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP2006UFGQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Application: automotive industry Drain-source voltage: -20V Drain current: -14A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 200nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -80A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2006UFGQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Application: automotive industry Drain-source voltage: -20V Drain current: -14A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 200nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -80A Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2007UFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -14.5A On-state resistance: 9mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 85nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -80A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2007UFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -14.5A On-state resistance: 9mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 85nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -80A Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2008UFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -11A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 2.4W Polarisation: unipolar Gate charge: 72nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -80A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2008UFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W Mounting: SMD Case: PowerDI®3333-8 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -11A On-state resistance: 8mΩ Type of transistor: P-MOSFET Power dissipation: 2.4W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -80A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP2010UFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -12.7A; Idm: -80A; 2.3W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -12.7A On-state resistance: 12.5mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 103nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -80A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2010UFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -12.7A; Idm: -80A; 2.3W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -12.7A On-state resistance: 12.5mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 103nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -80A Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2010UFV-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -40A Pulsed drain current: -80A Power dissipation: 2W Case: PowerDI3333-8 Gate-source voltage: ±10V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2010UFV-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -40A Pulsed drain current: -80A Power dissipation: 2W Case: PowerDI3333-8 Gate-source voltage: ±10V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP2012SN-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -900mA; Idm: -2.8A; 500mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -900mA Pulsed drain current: -2.8A Power dissipation: 0.5W Case: SC59 Gate-source voltage: ±12V On-state resistance: 0.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP2018LFK-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -10.3A; Idm: -90A; 1.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -10.3A Pulsed drain current: -90A Power dissipation: 1.3W Case: U-DFN2523-6 Gate-source voltage: ±12V On-state resistance: 25mΩ Mounting: SMD Gate charge: 113nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2021UFDE-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.2W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -8.9A On-state resistance: 80mΩ Type of transistor: P-MOSFET Power dissipation: 1.2W Polarisation: unipolar Gate charge: 59nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -60A Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2021UFDE-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.2W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -8.9A On-state resistance: 80mΩ Type of transistor: P-MOSFET Power dissipation: 1.2W Polarisation: unipolar Gate charge: 59nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -60A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP2021UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.3W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -8.9A On-state resistance: 80mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Gate charge: 59nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -60A Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2021UFDF-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; Idm: -60A; 0.47W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -7.2A On-state resistance: 80mΩ Type of transistor: P-MOSFET Power dissipation: 0.47W Polarisation: unipolar Gate charge: 59nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -60A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP2021UTS-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.9A; Idm: -55A; 1.3W; TSSOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.9A Pulsed drain current: -55A Power dissipation: 1.3W Case: TSSOP8 Gate-source voltage: ±10V On-state resistance: 40mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP2022LSS-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -8A On-state resistance: 13mΩ Type of transistor: P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±12V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 351 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP2022LSSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.4A; Idm: -35A; 1.6W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -7.4A Pulsed drain current: -35A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±12V On-state resistance: 22mΩ Mounting: SMD Gate charge: 60.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMP2023UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.6A; Idm: -40A; 1.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -7.6A Pulsed drain current: -40A Power dissipation: 1.3W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 90mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2023UFDF-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 0.73W; U-DFN2020-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.9A Power dissipation: 0.73W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 90mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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 |
DMP2033UVT-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26 Type of transistor: P-MOSFET Mounting: SMD Case: TSOT26 On-state resistance: 0.2Ω Kind of package: reel; tape Power dissipation: 1.7W Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.4A Gate charge: 10.4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -10A Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2033UVT-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26 Type of transistor: P-MOSFET Mounting: SMD Case: TSOT26 On-state resistance: 0.2Ω Kind of package: reel; tape Power dissipation: 1.7W Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.4A Gate charge: 10.4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -10A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2035U-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -2.9A On-state resistance: 62mΩ Type of transistor: P-MOSFET Power dissipation: 0.81W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3534 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP2035UFCL-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -40A; 1.6W Case: U-DFN1616-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -5.3A On-state resistance: 45mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2035UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -6.5A On-state resistance: 0.12Ω Type of transistor: P-MOSFET Power dissipation: 1.31W Polarisation: unipolar Gate charge: 20.5nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2035UFDF-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -6.5A On-state resistance: 0.12Ω Type of transistor: P-MOSFET Power dissipation: 1.31W Polarisation: unipolar Gate charge: 20.5nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2035UQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -24A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 62mΩ Mounting: SMD Gate charge: 15.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP2035UTS-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; 3.96A; Idm: 22A; 0.89W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: 3.96A Pulsed drain current: 22A Power dissipation: 0.89W Case: TSSOP8 Gate-source voltage: ±8V On-state resistance: 62mΩ Mounting: SMD Gate charge: 15.4nC Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2035UVT-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Pulsed drain current: -24A Power dissipation: 2W Case: TSOT26 Gate-source voltage: ±12V On-state resistance: 62mΩ Mounting: SMD Gate charge: 23.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
| DMP1022UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 1.3W
Gate charge: 48.3nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -90A
Case: U-DFN2020-6
Drain-source voltage: -12V
Drain current: -8.8A
On-state resistance: 32mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 1.3W
Gate charge: 48.3nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -90A
Case: U-DFN2020-6
Drain-source voltage: -12V
Drain current: -8.8A
On-state resistance: 32mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP1022UFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 1.3W
Gate charge: 48.3nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -90A
Case: U-DFN2020-6
Drain-source voltage: -12V
Drain current: -8.8A
On-state resistance: 32mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 1.3W
Gate charge: 48.3nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -90A
Case: U-DFN2020-6
Drain-source voltage: -12V
Drain current: -8.8A
On-state resistance: 32mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP1045U-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -3.1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -3.1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2635 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 325+ | 0.22 EUR |
| 560+ | 0.13 EUR |
| 625+ | 0.11 EUR |
| 725+ | 0.099 EUR |
| 770+ | 0.093 EUR |
| DMP1045UFY4-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.1A
Pulsed drain current: -25A
Power dissipation: 1.1W
Case: X2-DFN2015-3
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 23.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.1A
Pulsed drain current: -25A
Power dissipation: 1.1W
Case: X2-DFN2015-3
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 23.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2900 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 221+ | 0.32 EUR |
| 336+ | 0.21 EUR |
| 379+ | 0.19 EUR |
| 407+ | 0.18 EUR |
| 421+ | 0.17 EUR |
| 500+ | 0.16 EUR |
| DMP1046UFDB-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -15A; 2.2W
Mounting: SMD
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17.9nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Case: U-DFN2020-6
Drain-source voltage: -12V
Drain current: -4A
On-state resistance: 0.115Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -15A; 2.2W
Mounting: SMD
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17.9nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Case: U-DFN2020-6
Drain-source voltage: -12V
Drain current: -4A
On-state resistance: 0.115Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP1055UFDB-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.89W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 0.215Ω
Drain current: -4A
Drain-source voltage: -12V
Gate charge: 20.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -25A
Type of transistor: P-MOSFET
Case: U-DFN2020-6
Power dissipation: 1.89W
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.89W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 0.215Ω
Drain current: -4A
Drain-source voltage: -12V
Gate charge: 20.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -25A
Type of transistor: P-MOSFET
Case: U-DFN2020-6
Power dissipation: 1.89W
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP1055USW-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Drain current: -3A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 1.03W
Polarisation: unipolar
Gate charge: 20.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Drain-source voltage: -12V
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Drain current: -3A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 1.03W
Polarisation: unipolar
Gate charge: 20.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Drain-source voltage: -12V
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP1055USW-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Drain current: -3A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 1.03W
Polarisation: unipolar
Gate charge: 20.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Drain-source voltage: -12V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -20A; 1.03W; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Drain current: -3A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 1.03W
Polarisation: unipolar
Gate charge: 20.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
Drain-source voltage: -12V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP10H400SE-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2.1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2.1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1265 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 167+ | 0.43 EUR |
| 186+ | 0.39 EUR |
| 227+ | 0.32 EUR |
| 240+ | 0.3 EUR |
| 2500+ | 0.29 EUR |
| DMP10H400SEQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain current: -2.1A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -100V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain current: -2.1A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -100V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP10H400SK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Drain current: -8A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -100V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Drain current: -8A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1469 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 61+ | 1.17 EUR |
| 147+ | 0.49 EUR |
| 167+ | 0.43 EUR |
| 192+ | 0.37 EUR |
| 203+ | 0.35 EUR |
| DMP10H4D2S-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -210mA; Idm: -1A; 440mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain current: -210mA
On-state resistance: 5mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.44W
Polarisation: unipolar
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1A
Drain-source voltage: -100V
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -210mA; Idm: -1A; 440mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain current: -210mA
On-state resistance: 5mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.44W
Polarisation: unipolar
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1A
Drain-source voltage: -100V
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP10H4D2S-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.21A; 0.38W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Drain current: -210mA
On-state resistance: 5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.38W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -100V
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.21A; 0.38W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Drain current: -210mA
On-state resistance: 5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.38W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -100V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 70+ | 1.02 EUR |
| 100+ | 0.72 EUR |
| 180+ | 0.4 EUR |
| 500+ | 0.14 EUR |
| DMP1100UCB4-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; Idm: -13A; 1.1W
Mounting: SMD
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Case: X2-WLB0808-4
Gate charge: 14nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -13A
Drain-source voltage: -12V
Drain current: -2.6A
On-state resistance: 0.4Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; Idm: -13A; 1.1W
Mounting: SMD
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Case: X2-WLB0808-4
Gate charge: 14nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -13A
Drain-source voltage: -12V
Drain current: -2.6A
On-state resistance: 0.4Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP1200UFR4-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2A; 1.26W; X2-DFN1010-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
Power dissipation: 1.26W
Case: X2-DFN1010-3
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2A; 1.26W; X2-DFN1010-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
Power dissipation: 1.26W
Case: X2-DFN1010-3
Gate-source voltage: ±8V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| DMP1245UFCL-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.25A; Idm: -16.67A; 1.7W
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -16.67A
Case: X1-DFN1616-6
Drain-source voltage: -12V
Drain current: -5.25A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26.1nC
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.25A; Idm: -16.67A; 1.7W
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -16.67A
Case: X1-DFN1616-6
Drain-source voltage: -12V
Drain current: -5.25A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26.1nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP1555UFA-7B |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -0.2A; 0.36W; X2-DFN0806-3
Mounting: SMD
Case: X2-DFN0806-3
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -12V
Drain current: -200mA
On-state resistance: 5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Anzahl je Verpackung: 10 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -0.2A; 0.36W; X2-DFN0806-3
Mounting: SMD
Case: X2-DFN0806-3
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -12V
Drain current: -200mA
On-state resistance: 5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
| DMP2002UPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -33.5A; Idm: -100A; 6.25W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -33.5A
On-state resistance: 3.8mΩ
Type of transistor: P-MOSFET
Power dissipation: 6.25W
Polarisation: unipolar
Gate charge: 585nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -100A
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -33.5A; Idm: -100A; 6.25W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -33.5A
On-state resistance: 3.8mΩ
Type of transistor: P-MOSFET
Power dissipation: 6.25W
Polarisation: unipolar
Gate charge: 585nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -100A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMP2003UPS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -120A; Idm: -350A; 2.7W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -120A
On-state resistance: 4mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.7W
Polarisation: unipolar
Gate charge: 177nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -350A
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -120A; Idm: -350A; 2.7W
Mounting: SMD
Case: PowerDI5060-8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -120A
On-state resistance: 4mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.7W
Polarisation: unipolar
Gate charge: 177nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -350A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMP2004DMK-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -550mA; Idm: -1.9A; 500mW
Mounting: SMD
Case: SOT26
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -0.55A
On-state resistance: 2mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -1.9A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -550mA; Idm: -1.9A; 500mW
Mounting: SMD
Case: SOT26
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -0.55A
On-state resistance: 2mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -1.9A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2004DWK-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; 250mW; SOT363
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -310mA
On-state resistance: 2mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.25W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; 250mW; SOT363
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -310mA
On-state resistance: 2mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.25W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2004K-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23
Mounting: SMD
Drain-source voltage: -20V
Drain current: -600mA
On-state resistance: 2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.55W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23
Mounting: SMD
Drain-source voltage: -20V
Drain current: -600mA
On-state resistance: 2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.55W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: SOT23
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2560 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 264+ | 0.27 EUR |
| 379+ | 0.19 EUR |
| 481+ | 0.15 EUR |
| 582+ | 0.12 EUR |
| 704+ | 0.1 EUR |
| 1213+ | 0.059 EUR |
| 1283+ | 0.056 EUR |
| DMP2004TK-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.75A; 320mW
Mounting: SMD
Case: SOT523
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -310mA
On-state resistance: 2.4mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.32W
Polarisation: unipolar
Gate charge: 970pC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -0.75A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.75A; 320mW
Mounting: SMD
Case: SOT523
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -310mA
On-state resistance: 2.4mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.32W
Polarisation: unipolar
Gate charge: 970pC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -0.75A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2004UFG-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -95A
Pulsed drain current: -180A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±12V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -95A
Pulsed drain current: -180A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±12V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP2004UFG-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -95A
Pulsed drain current: -180A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±12V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -95A
Pulsed drain current: -180A
Power dissipation: 2.4W
Case: PowerDI3333-8
Gate-source voltage: ±12V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| DMP2004VK-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.44A; 0.4W; SOT563
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -440mA
On-state resistance: 1.4Ω
Type of transistor: P-MOSFET x2
Power dissipation: 0.4W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.44A; 0.4W; SOT563
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -440mA
On-state resistance: 1.4Ω
Type of transistor: P-MOSFET x2
Power dissipation: 0.4W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2004WK-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -400mA; Idm: -1.4A; 250mW
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -400mA
On-state resistance: 2mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.25W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -1.4A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -400mA; Idm: -1.4A; 250mW
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -400mA
On-state resistance: 2mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.25W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -1.4A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2005UFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -100A; 2.2W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -15A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 125nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -100A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -100A; 2.2W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -15A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 125nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -100A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP2005UFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -100A; 2.2W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -15A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 125nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -100A
Anzahl je Verpackung: 2000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -100A; 2.2W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -15A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Gate charge: 125nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -100A
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| DMP2006UFG-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W
Mounting: SMD
Case: PowerDI®3333-8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -14A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 200nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -80A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W
Mounting: SMD
Case: PowerDI®3333-8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -14A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 200nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -80A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2006UFGQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: -20V
Drain current: -14A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 200nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -80A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: -20V
Drain current: -14A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 200nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -80A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP2006UFGQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: -20V
Drain current: -14A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 200nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -80A
Anzahl je Verpackung: 2000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: -20V
Drain current: -14A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 200nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -80A
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| DMP2007UFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -14.5A
On-state resistance: 9mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 85nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -80A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -14.5A
On-state resistance: 9mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 85nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -80A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP2007UFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -14.5A
On-state resistance: 9mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 85nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -80A
Anzahl je Verpackung: 2000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -14.5A
On-state resistance: 9mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 85nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -80A
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| DMP2008UFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -11A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 72nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -80A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -11A
On-state resistance: 17mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 72nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -80A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP2008UFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W
Mounting: SMD
Case: PowerDI®3333-8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -11A
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -80A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W
Mounting: SMD
Case: PowerDI®3333-8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -11A
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -80A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2010UFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12.7A; Idm: -80A; 2.3W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -12.7A
On-state resistance: 12.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 103nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -80A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12.7A; Idm: -80A; 2.3W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -12.7A
On-state resistance: 12.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 103nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -80A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP2010UFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12.7A; Idm: -80A; 2.3W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -12.7A
On-state resistance: 12.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 103nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -80A
Anzahl je Verpackung: 2000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12.7A; Idm: -80A; 2.3W
Mounting: SMD
Case: PowerDI3333-8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -12.7A
On-state resistance: 12.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Gate charge: 103nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -80A
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
| DMP2010UFV-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -40A
Pulsed drain current: -80A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -40A
Pulsed drain current: -80A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP2010UFV-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -40A
Pulsed drain current: -80A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -40A
Pulsed drain current: -80A
Power dissipation: 2W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2012SN-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -900mA; Idm: -2.8A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -900mA
Pulsed drain current: -2.8A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -900mA; Idm: -2.8A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -900mA
Pulsed drain current: -2.8A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2018LFK-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10.3A; Idm: -90A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -10.3A
Pulsed drain current: -90A
Power dissipation: 1.3W
Case: U-DFN2523-6
Gate-source voltage: ±12V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10.3A; Idm: -90A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -10.3A
Pulsed drain current: -90A
Power dissipation: 1.3W
Case: U-DFN2523-6
Gate-source voltage: ±12V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP2021UFDE-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.2W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -8.9A
On-state resistance: 80mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 59nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -60A
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.2W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -8.9A
On-state resistance: 80mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 59nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -60A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP2021UFDE-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.2W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -8.9A
On-state resistance: 80mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 59nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -60A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.2W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -8.9A
On-state resistance: 80mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 59nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -60A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2021UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.3W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -8.9A
On-state resistance: 80mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 59nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -60A
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.3W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -8.9A
On-state resistance: 80mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 59nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -60A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP2021UFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; Idm: -60A; 0.47W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -7.2A
On-state resistance: 80mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.47W
Polarisation: unipolar
Gate charge: 59nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -60A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; Idm: -60A; 0.47W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -7.2A
On-state resistance: 80mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.47W
Polarisation: unipolar
Gate charge: 59nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -60A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2021UTS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.9A; Idm: -55A; 1.3W; TSSOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.9A
Pulsed drain current: -55A
Power dissipation: 1.3W
Case: TSSOP8
Gate-source voltage: ±10V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.9A; Idm: -55A; 1.3W; TSSOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.9A
Pulsed drain current: -55A
Power dissipation: 1.3W
Case: TSSOP8
Gate-source voltage: ±10V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMP2022LSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 351 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 87+ | 0.83 EUR |
| 200+ | 0.36 EUR |
| 211+ | 0.34 EUR |
| 5000+ | 0.33 EUR |
| DMP2022LSSQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.4A; Idm: -35A; 1.6W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.4A
Pulsed drain current: -35A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 60.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.4A; Idm: -35A; 1.6W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.4A
Pulsed drain current: -35A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 60.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| DMP2023UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.6A; Idm: -40A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.6A
Pulsed drain current: -40A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.6A; Idm: -40A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.6A
Pulsed drain current: -40A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP2023UFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 0.73W; U-DFN2020-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.9A
Power dissipation: 0.73W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.9A; 0.73W; U-DFN2020-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.9A
Power dissipation: 0.73W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP2033UVT-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
On-state resistance: 0.2Ω
Kind of package: reel; tape
Power dissipation: 1.7W
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.4A
Gate charge: 10.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -10A
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
On-state resistance: 0.2Ω
Kind of package: reel; tape
Power dissipation: 1.7W
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.4A
Gate charge: 10.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -10A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP2033UVT-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
On-state resistance: 0.2Ω
Kind of package: reel; tape
Power dissipation: 1.7W
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.4A
Gate charge: 10.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -10A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26
Type of transistor: P-MOSFET
Mounting: SMD
Case: TSOT26
On-state resistance: 0.2Ω
Kind of package: reel; tape
Power dissipation: 1.7W
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.4A
Gate charge: 10.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -10A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2035U-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -2.9A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.81W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; 0.81W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -2.9A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.81W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3534 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 157+ | 0.46 EUR |
| 286+ | 0.25 EUR |
| 358+ | 0.2 EUR |
| 414+ | 0.17 EUR |
| 477+ | 0.15 EUR |
| 766+ | 0.093 EUR |
| 811+ | 0.088 EUR |
| DMP2035UFCL-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -40A; 1.6W
Case: U-DFN1616-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -5.3A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Anzahl je Verpackung: 3000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.3A; Idm: -40A; 1.6W
Case: U-DFN1616-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -5.3A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| DMP2035UFDF-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 1.31W
Polarisation: unipolar
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 1.31W
Polarisation: unipolar
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
| DMP2035UFDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 1.31W
Polarisation: unipolar
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 1.31W
Polarisation: unipolar
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2035UQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -24A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; Idm: -24A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -24A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2035UTS-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; 3.96A; Idm: 22A; 0.89W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: 3.96A
Pulsed drain current: 22A
Power dissipation: 0.89W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; 3.96A; Idm: 22A; 0.89W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: 3.96A
Pulsed drain current: 22A
Power dissipation: 0.89W
Case: TSSOP8
Gate-source voltage: ±8V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 15.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DMP2035UVT-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; Idm: -24A; 2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Pulsed drain current: -24A
Power dissipation: 2W
Case: TSOT26
Gate-source voltage: ±12V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 23.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar