auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.38 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP2021UFDF-7 Diodes Zetex
Description: MOSFET P-CH 20V 9A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V, Power Dissipation (Max): 730mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V.
Weitere Produktangebote DMP2021UFDF-7 nach Preis ab 0.28 EUR bis 1.21 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
DMP2021UFDF-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 9A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V |
auf Bestellung 507000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
DMP2021UFDF-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 9A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V |
auf Bestellung 510492 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
DMP2021UFDF-7 | Hersteller : Diodes Zetex | Trans MOSFET P-CH 20V 9A 6-Pin UDFN EP T/R |
auf Bestellung 2596 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
DMP2021UFDF-7 | Hersteller : Diodes Zetex | Trans MOSFET P-CH 20V 9A 6-Pin UDFN EP T/R |
auf Bestellung 2596 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
DMP2021UFDF-7 | Hersteller : Diodes Incorporated | MOSFET P-Ch -20V Enh FET 8Vgss 0.73W 2760pF |
auf Bestellung 4048 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
DMP2021UFDF-7 | Hersteller : Diodes Inc | Trans MOSFET P-CH 20V 9A 6-Pin UDFN EP T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
DMP2021UFDF-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; Idm: -60A; 0.47W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -7.2A On-state resistance: 80mΩ Type of transistor: P-MOSFET Power dissipation: 0.47W Polarisation: unipolar Gate charge: 59nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -60A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
DMP2021UFDF-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; Idm: -60A; 0.47W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -7.2A On-state resistance: 80mΩ Type of transistor: P-MOSFET Power dissipation: 0.47W Polarisation: unipolar Gate charge: 59nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -60A |
Produkt ist nicht verfügbar |