DMP2021UFDE-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 11.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
Description: MOSFET P-CH 20V 11.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.27 EUR |
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Technische Details DMP2021UFDE-13 Diodes Incorporated
Description: MOSFET P-CH 20V 11.1A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type E), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V.
Weitere Produktangebote DMP2021UFDE-13
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DMP2021UFDE-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.2W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -8.9A On-state resistance: 80mΩ Type of transistor: P-MOSFET Power dissipation: 1.2W Polarisation: unipolar Gate charge: 59nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -60A Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2021UFDE-13 | Hersteller : Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 10K |
Produkt ist nicht verfügbar |
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DMP2021UFDE-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.2W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -8.9A On-state resistance: 80mΩ Type of transistor: P-MOSFET Power dissipation: 1.2W Polarisation: unipolar Gate charge: 59nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -60A |
Produkt ist nicht verfügbar |