DMPH3010LK3-13 Diodes Incorporated
auf Bestellung 3815 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 1.36 EUR |
| 10+ | 1.12 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.6 EUR |
| 2500+ | 0.58 EUR |
| 5000+ | 0.54 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMPH3010LK3-13 Diodes Incorporated
Description: MOSFET P-CHANNEL 30V 50A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, Power Dissipation (Max): 3.9W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: TO-252, (D-Pak), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6807 pF @ 15 V.
Weitere Produktangebote DMPH3010LK3-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMPH3010LK3-13 | Hersteller : DIODES INCORPORATED |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -11A; Idm: -100A; 3.9W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -11A Pulsed drain current: -100A Power dissipation: 3.9W Case: TO252 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 139nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||
 |
DMPH3010LK3-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CHANNEL 30V 50A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V Power Dissipation (Max): 3.9W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: TO-252, (D-Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6807 pF @ 15 V |
Produkt ist nicht verfügbar |
|
| DMPH3010LK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11A; Idm: -100A; 3.9W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -11A Pulsed drain current: -100A Power dissipation: 3.9W Case: TO252 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 139nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |