DMS2085LSD-13 Diodes Incorporated
auf Bestellung 4670 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 0.59 EUR |
| 10+ | 0.47 EUR |
| 100+ | 0.3 EUR |
| 1000+ | 0.18 EUR |
| 10000+ | 0.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMS2085LSD-13 Diodes Incorporated
Description: MOSFET P-CH 20V 3.3A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 15 V.
Weitere Produktangebote DMS2085LSD-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
DMS2085LSD-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET P-CH 20V 3.3A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 15 V |
auf Bestellung 87500 Stücke: Lieferzeit 10-14 Tag (e) |
|
|
|
DMS2085LSD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 3.3A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 15 V |
auf Bestellung 87500 Stücke: Lieferzeit 10-14 Tag (e) |
|
 |
DMS2085LSD-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMS2085LSD-13 - Leistungs-MOSFET, p-Kanal, 20 V, 3.3 A, 0.07 ohm, SOIC, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 3.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1.1W Bauform - Transistor: SOIC Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|
|
|
DMS2085LSD-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMS2085LSD-13 - Leistungs-MOSFET, p-Kanal, 20 V, 3.3 A, 0.07 ohm, SOIC, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 3.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1.1W Bauform - Transistor: SOIC Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|
 |
DMS2085LSD-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -11.2A; 1W; SO8 Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -11.2A Mounting: SMD Case: SO8 Drain-source voltage: -20V Drain current: -3.4A On-state resistance: 0.125Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
DMS2085LSD-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -11.2A; 1W; SO8 Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -11.2A Mounting: SMD Case: SO8 Drain-source voltage: -20V Drain current: -3.4A On-state resistance: 0.125Ω |
Produkt ist nicht verfügbar |