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DMTH10H025SK3-13

DMTH10H025SK3-13 Diodes Incorporated

DMTH10H025SK3.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 46.3A TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.3A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.38 EUR
5000+ 0.36 EUR
12500+ 0.34 EUR
Mindestbestellmenge: 2500
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Technische Details DMTH10H025SK3-13 Diodes Incorporated

Description: MOSFET N-CH 100V 46.3A TO252 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46.3A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252 (DPAK), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V, Qualification: AEC-Q101.

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DMTH10H025SK3-13 DMTH10H025SK3-13 Hersteller : Diodes Incorporated DMTH10H025SK3.pdf Description: MOSFET N-CH 100V 46.3A TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.3A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 24563 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1.02 EUR
21+ 0.88 EUR
100+ 0.61 EUR
500+ 0.51 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 18
DMTH10H025SK3-13 DMTH10H025SK3-13 Hersteller : Diodes Incorporated DMTH10H025SK3-1365836.pdf MOSFETs MOSFET BVDSS: 61V~100V TO252 T&R 2.5K
auf Bestellung 3636 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.05 EUR
10+ 0.91 EUR
100+ 0.63 EUR
500+ 0.53 EUR
1000+ 0.45 EUR
2500+ 0.41 EUR
5000+ 0.4 EUR
Mindestbestellmenge: 3
DMTH10H025SK3-13 Hersteller : DIODES INCORPORATED DMTH10H025SK3.pdf DMTH10H025SK3-13 SMD N channel transistors
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