DMTH4004SCTB-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 40V 100A TO263AB T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
auf Bestellung 5600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 0.98 EUR |
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Technische Details DMTH4004SCTB-13 Diodes Incorporated
Description: MOSFET N-CH 40V 100A TO263AB T&R, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V, Power Dissipation (Max): 4.7W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V.
Weitere Produktangebote DMTH4004SCTB-13 nach Preis ab 1.52 EUR bis 3.5 EUR
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DMTH4004SCTB-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 40V 100A TO263AB T&R Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V Power Dissipation (Max): 4.7W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V |
auf Bestellung 6395 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH4004SCTB-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB Mounting: SMD Case: TO263AB Kind of package: reel; tape Power dissipation: 4.7W Drain current: 100A On-state resistance: 3mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 68.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 200A Drain-source voltage: 40V Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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DMTH4004SCTB-13 | Hersteller : Diodes Incorporated |
MOSFETs 40V 175c N-Ch FET 3mOhm 10Vgs 100A |
Produkt ist nicht verfügbar |
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| DMTH4004SCTB-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB Mounting: SMD Case: TO263AB Kind of package: reel; tape Power dissipation: 4.7W Drain current: 100A On-state resistance: 3mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 68.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 200A Drain-source voltage: 40V |
Produkt ist nicht verfügbar |