![DMTH4004LPS-13 DMTH4004LPS-13](https://media.digikey.com/Renders/Diodes%20Renders/31~POWERDI5060-8~~8.jpg)
DMTH4004LPS-13 Diodes Incorporated
![DMTH4004LPS.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 40V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 2.6W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 82.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4508 pF @ 20 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.97 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMTH4004LPS-13 Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V, Power Dissipation (Max): 2.6W (Ta), 138W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 82.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4508 pF @ 20 V.
Weitere Produktangebote DMTH4004LPS-13 nach Preis ab 0.83 EUR bis 2.29 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
DMTH4004LPS-13 | Hersteller : Diodes Incorporated |
![]() |
auf Bestellung 2642 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
DMTH4004LPS-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Power Dissipation (Max): 2.6W (Ta), 138W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 82.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4508 pF @ 20 V |
auf Bestellung 4870 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
DMTH4004LPS-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 21A Pulsed drain current: 100A Power dissipation: 2.6W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 82.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
DMTH4004LPS-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 21A Pulsed drain current: 100A Power dissipation: 2.6W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 82.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |