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DMTH4008LFDFWQ-13 Diodes Incorporated
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Description: MOSFET N-CH 40V 11.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Power Dissipation (Max): 990mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 290000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.33 EUR |
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Technische Details DMTH4008LFDFWQ-13 Diodes Incorporated
Description: MOSFET N-CH 40V 11.6A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V, Power Dissipation (Max): 990mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: U-DFN2020-6 (SWP) (Type F), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH4008LFDFWQ-13 nach Preis ab 0.36 EUR bis 0.99 EUR
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DMTH4008LFDFWQ-13 | Hersteller : Diodes Incorporated |
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auf Bestellung 6400 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4008LFDFWQ-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V Power Dissipation (Max): 990mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (SWP) (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 298863 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4008LFDFWQ-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 8.2A Pulsed drain current: 80A Power dissipation: 2.35W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 14.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMTH4008LFDFWQ-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 8.2A Pulsed drain current: 80A Power dissipation: 2.35W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 14.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |