DMTH4004SPS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 40V 31A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
Power Dissipation (Max): 3.6W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.85 EUR |
| 5000+ | 0.81 EUR |
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Technische Details DMTH4004SPS-13 Diodes Incorporated
Description: MOSFET N-CH 40V 31A PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V, Power Dissipation (Max): 3.6W (Ta), 167W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V.
Weitere Produktangebote DMTH4004SPS-13 nach Preis ab 0.9 EUR bis 2.04 EUR
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DMTH4004SPS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 40V 31A PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V Power Dissipation (Max): 3.6W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V |
auf Bestellung 9963 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH4004SPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 26A; Idm: 350A; 3.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 26A Pulsed drain current: 350A Power dissipation: 3.6W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 68.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
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DMTH4004SPS-13 | Hersteller : Diodes Incorporated |
MOSFET N-Ch Enh Mode Fet 40Vdss 20Vgss |
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| DMTH4004SPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 26A; Idm: 350A; 3.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 26A Pulsed drain current: 350A Power dissipation: 3.6W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 68.6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |