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DMTH10H032LPDWQ-13 Diodes Incorporated
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Description: MOSFET 2N-CH 100V 24A POWERDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 37W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.68 EUR |
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Technische Details DMTH10H032LPDWQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 100V 24A POWERDI50, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), 37W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V, Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UXD), Grade: Automotive, Qualification: AEC-Q101.
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DMTH10H032LPDWQ-13 | Hersteller : DIODES INCORPORATED |
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