DMTH4011SPDQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.69 EUR |
| 5000+ | 0.66 EUR |
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Technische Details DMTH4011SPDQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.1A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.6W (Ta), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V, Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMTH4011SPDQ-13 nach Preis ab 0.74 EUR bis 1.67 EUR
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DMTH4011SPDQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 40V 11.1A PWRDI50 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 7091 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4011SPDQ-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 31V-40V |
auf Bestellung 848 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH4011SPDQ-13 | Hersteller : DIODES INCORPORATED |
DMTH4011SPDQ-13 SMD N channel transistors |
Produkt ist nicht verfügbar |