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DMTH4011SPD-13

DMTH4011SPD-13 Diodes Incorporated

DMTH4011SPD.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 237500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.49 EUR
5000+ 0.47 EUR
12500+ 0.43 EUR
Mindestbestellmenge: 2500
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Technische Details DMTH4011SPD-13 Diodes Incorporated

Description: MOSFET 2N-CH 40V 11.1A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.6W (Ta), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V, Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMTH4011SPD-13 nach Preis ab 0.47 EUR bis 1.31 EUR

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DMTH4011SPD-13 DMTH4011SPD-13 Hersteller : Diodes Incorporated DMTH4011SPD.pdf Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 240020 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.3 EUR
16+ 1.12 EUR
100+ 0.78 EUR
500+ 0.65 EUR
1000+ 0.55 EUR
Mindestbestellmenge: 14
DMTH4011SPD-13 DMTH4011SPD-13 Hersteller : Diodes Incorporated DIOD_S_A0004145387_1-2542518.pdf MOSFET MOSFET BVDSS 31V 40V
auf Bestellung 10319 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.31 EUR
10+ 1.13 EUR
100+ 0.78 EUR
500+ 0.65 EUR
1000+ 0.56 EUR
2500+ 0.49 EUR
5000+ 0.47 EUR
Mindestbestellmenge: 3
DMTH4011SPD-13 Hersteller : DIODES INCORPORATED DMTH4011SPD.pdf DMTH4011SPD-13 SMD N channel transistors
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