DMTH4007LK3Q-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 40V 16.8A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 42500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.68 EUR |
| 5000+ | 0.65 EUR |
| 12500+ | 0.62 EUR |
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Technische Details DMTH4007LK3Q-13 Diodes Incorporated
Description: MOSFET N-CH 40V 16.8A/70A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta), 70A (Tc), Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V, Power Dissipation (Max): 2.6W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 29.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH4007LK3Q-13 nach Preis ab 0.65 EUR bis 1.65 EUR
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DMTH4007LK3Q-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 40V 16.8A/70A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 29.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 44985 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH4007LK3Q-13 | Hersteller : Diodes Incorporated |
MOSFET 40V 175c N-Ch FET 7.3mOhm 10Vgs 70A |
auf Bestellung 1913 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH4007LK3Q-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 13.9A; Idm: 80A; 2.6W; TO252 Mounting: SMD Kind of package: reel; tape Case: TO252 Power dissipation: 2.6W Drain-source voltage: 40V Drain current: 13.9A On-state resistance: 9.8mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 29.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH4007LK3Q-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 13.9A; Idm: 80A; 2.6W; TO252 Mounting: SMD Kind of package: reel; tape Case: TO252 Power dissipation: 2.6W Drain-source voltage: 40V Drain current: 13.9A On-state resistance: 9.8mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 29.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A |
Produkt ist nicht verfügbar |