Type-UX;-;-8.jpg "DMTH4014LFVWQ-7")
DMTH4014LFVWQ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 31V~40V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc)
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 394000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.36 EUR |
| 6000+ | 0.34 EUR |
| 10000+ | 0.31 EUR |
| 50000+ | 0.3 EUR |
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Technische Details DMTH4014LFVWQ-7 Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc), Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V, Power Dissipation (Max): 3.1W, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH4014LFVWQ-7 nach Preis ab 0.4 EUR bis 1.06 EUR
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DMTH4014LFVWQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc) Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V Power Dissipation (Max): 3.1W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 395515 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH4014LFVWQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.1A; Idm: 180A; 3.1W Case: PowerDI3333-8 Mounting: SMD On-state resistance: 26mΩ Kind of package: reel; tape Power dissipation: 3.1W Polarisation: unipolar Gate charge: 11.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 180A Drain-source voltage: 40V Drain current: 8.1A Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMTH4014LFVWQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 8.1A; Idm: 180A; 3.1W Case: PowerDI3333-8 Mounting: SMD On-state resistance: 26mΩ Kind of package: reel; tape Power dissipation: 3.1W Polarisation: unipolar Gate charge: 11.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 180A Drain-source voltage: 40V Drain current: 8.1A Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |