DMT6017LFDF-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 6.5A; Idm: 50A; 1.76W
Mounting: SMD
Case: U-DFN2020-6
Power dissipation: 1.76W
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 23mΩ
Pulsed drain current: 50A
Gate charge: 15.3nC
Polarisation: unipolar
Drain current: 6.5A
Kind of channel: enhanced
Drain-source voltage: 65V
Anzahl je Verpackung: 10000 Stücke
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Technische Details DMT6017LFDF-13 DIODES INCORPORATED
Description: MOSFET N-CH 65V 8.1A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 65 V, Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V.
Weitere Produktangebote DMT6017LFDF-13
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DMT6017LFDF-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 65V 8.1A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V |
Produkt ist nicht verfügbar |
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DMT6017LFDF-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V U-DFN2020-6 T&R 10K |
Produkt ist nicht verfügbar |
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| DMT6017LFDF-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 6.5A; Idm: 50A; 1.76W Mounting: SMD Case: U-DFN2020-6 Power dissipation: 1.76W Kind of package: reel; tape Type of transistor: N-MOSFET Gate-source voltage: ±16V On-state resistance: 23mΩ Pulsed drain current: 50A Gate charge: 15.3nC Polarisation: unipolar Drain current: 6.5A Kind of channel: enhanced Drain-source voltage: 65V |
Produkt ist nicht verfügbar |