DMTH10H010SPSQ-13 Diodes Incorporated
auf Bestellung 4892 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.66 EUR |
| 10+ | 2.22 EUR |
| 100+ | 1.75 EUR |
| 250+ | 1.62 EUR |
| 500+ | 1.47 EUR |
| 1000+ | 1.28 EUR |
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Technische Details DMTH10H010SPSQ-13 Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V, Power Dissipation (Max): 1.5W (Ta), 166W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH10H010SPSQ-13 nach Preis ab 1.29 EUR bis 2.71 EUR
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DMTH10H010SPSQ-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 100V PWRDI5060Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V Power Dissipation (Max): 1.5W (Ta), 166W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 2485 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH10H010SPSQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V Power Dissipation (Max): 1.5W (Ta), 166W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 2485 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH10H010SPSQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; Idm: 250A; 1.5W Application: automotive industry Mounting: SMD Kind of package: reel; tape Gate charge: 56.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 250A Case: PowerDI5060-8 Drain-source voltage: 100V Drain current: 8.3A On-state resistance: 11.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.5W Polarisation: unipolar Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH10H010SPSQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; Idm: 250A; 1.5W Application: automotive industry Mounting: SMD Kind of package: reel; tape Gate charge: 56.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 250A Case: PowerDI5060-8 Drain-source voltage: 100V Drain current: 8.3A On-state resistance: 11.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.5W Polarisation: unipolar |
Produkt ist nicht verfügbar |