DMT8012LFG-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 80V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 12A, 10V
Power Dissipation (Max): 2.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.63 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMT8012LFG-7 Diodes Incorporated
Description: MOSFET N-CH 80V PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 12A, 10V, Power Dissipation (Max): 2.2W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V.
Weitere Produktangebote DMT8012LFG-7 nach Preis ab 0.59 EUR bis 1.51 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMT8012LFG-7 | Hersteller : Diodes Incorporated |
MOSFET 80V N-Ch Enh FET 20Vgs 9.5A 1949pF |
auf Bestellung 6395 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
DMT8012LFG-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 80V PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 12A, 10V Power Dissipation (Max): 2.2W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V |
auf Bestellung 5040 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
DMT8012LFG-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 80V 9.5A 8-Pin PowerDI EP T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
| DMT8012LFG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 30A; 2.2W; PowerDI®3333-8 Kind of package: reel; tape Drain-source voltage: 80V Drain current: 30A On-state resistance: 22mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PowerDI®3333-8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| DMT8012LFG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 30A; 2.2W; PowerDI®3333-8 Kind of package: reel; tape Drain-source voltage: 80V Drain current: 30A On-state resistance: 22mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PowerDI®3333-8 |
Produkt ist nicht verfügbar |