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DMT69M5LCG-7 DIODES INCORPORATED


Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W
Mounting: SMD
Case: V-DFN3333-8
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 11.7A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.64W
Polarisation: unipolar
Gate charge: 28.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 208A
Anzahl je Verpackung: 2000 Stücke
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Technische Details DMT69M5LCG-7 DIODES INCORPORATED

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W, Mounting: SMD, Case: V-DFN3333-8, Kind of package: reel; tape, Drain-source voltage: 60V, Drain current: 11.7A, On-state resistance: 12.5mΩ, Type of transistor: N-MOSFET, Power dissipation: 2.64W, Polarisation: unipolar, Gate charge: 28.4nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 208A, Anzahl je Verpackung: 2000 Stücke.

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DMT69M5LCG-7 Hersteller : DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W
Mounting: SMD
Case: V-DFN3333-8
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 11.7A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.64W
Polarisation: unipolar
Gate charge: 28.4nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 208A
Produkt ist nicht verfügbar