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DMTH10H010LCTB-13 Diodes Incorporated
auf Bestellung 687 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.55 EUR |
10+ | 2.13 EUR |
100+ | 1.7 EUR |
800+ | 1.23 EUR |
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Technische Details DMTH10H010LCTB-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 71A; Idm: 400A; 3.9W; TO263AB, Mounting: SMD, Kind of package: reel; tape, Gate charge: 53.7nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 400A, Case: TO263AB, Drain-source voltage: 100V, Drain current: 71A, On-state resistance: 17mΩ, Type of transistor: N-MOSFET, Power dissipation: 3.9W, Polarisation: unipolar, Anzahl je Verpackung: 800 Stücke.
Weitere Produktangebote DMTH10H010LCTB-13
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DMTH10H010LCTB-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 71A; Idm: 400A; 3.9W; TO263AB Mounting: SMD Kind of package: reel; tape Gate charge: 53.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Case: TO263AB Drain-source voltage: 100V Drain current: 71A On-state resistance: 17mΩ Type of transistor: N-MOSFET Power dissipation: 3.9W Polarisation: unipolar Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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DMTH10H010LCTB-13 | Hersteller : Diodes Incorporated |
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Produkt ist nicht verfügbar |
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DMTH10H010LCTB-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 71A; Idm: 400A; 3.9W; TO263AB Mounting: SMD Kind of package: reel; tape Gate charge: 53.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Case: TO263AB Drain-source voltage: 100V Drain current: 71A On-state resistance: 17mΩ Type of transistor: N-MOSFET Power dissipation: 3.9W Polarisation: unipolar |
Produkt ist nicht verfügbar |