auf Bestellung 20494 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 1.18 EUR |
| 10+ | 1.02 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.59 EUR |
| 1000+ | 0.5 EUR |
| 3000+ | 0.42 EUR |
| 6000+ | 0.41 EUR |
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Technische Details DMT69M8LFV-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 2.2W, Case: PowerDI3333-8, Kind of package: reel; tape, Pulsed drain current: 60A, Mounting: SMD, Drain-source voltage: 60V, Drain current: 8.9A, On-state resistance: 13.3mΩ, Type of transistor: N-MOSFET, Power dissipation: 2.2W, Polarisation: unipolar, Gate charge: 33.5nC, Kind of channel: enhanced, Gate-source voltage: ±16V, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote DMT69M8LFV-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMT69M8LFV-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 2.2W Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: 60A Mounting: SMD Drain-source voltage: 60V Drain current: 8.9A On-state resistance: 13.3mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 33.5nC Kind of channel: enhanced Gate-source voltage: ±16V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||
| DMT69M8LFV-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 60A; 2.2W Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: 60A Mounting: SMD Drain-source voltage: 60V Drain current: 8.9A On-state resistance: 13.3mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Gate charge: 33.5nC Kind of channel: enhanced Gate-source voltage: ±16V |
Produkt ist nicht verfügbar |