DMTH10H009SPS-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 350A; 3.2W
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 350A
Case: PowerDI5060-8
Drain-source voltage: 100V
Drain current: 11A
On-state resistance: 8.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.2W
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
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Technische Details DMTH10H009SPS-13 DIODES INCORPORATED
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 350A; 3.2W, Mounting: SMD, Kind of package: reel; tape, Gate charge: 30nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 350A, Case: PowerDI5060-8, Drain-source voltage: 100V, Drain current: 11A, On-state resistance: 8.9mΩ, Type of transistor: N-MOSFET, Power dissipation: 3.2W, Polarisation: unipolar, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote DMTH10H009SPS-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DMTH10H009SPS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 100V PWRDI5060 |
Produkt ist nicht verfügbar |
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| DMTH10H009SPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 350A; 3.2W Mounting: SMD Kind of package: reel; tape Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 350A Case: PowerDI5060-8 Drain-source voltage: 100V Drain current: 11A On-state resistance: 8.9mΩ Type of transistor: N-MOSFET Power dissipation: 3.2W Polarisation: unipolar |
Produkt ist nicht verfügbar |