auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.1 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP2110UVT-13 Diodes Zetex
Description: MOSFET 2P-CH 20V 1.8A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 740mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V, Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: TSOT-26.
Weitere Produktangebote DMP2110UVT-13 nach Preis ab 0.13 EUR bis 0.13 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
DMP2110UVT-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2P-CH 20V 1.8A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 740mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-26 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||
| DMP2110UVT-13 | Hersteller : Diodes Inc |
Dual P-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
||||||
|
|
DMP2110UVT-13 | Hersteller : Diodes Zetex |
Dual P-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
|||||
 |
DMP2110UVT-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.4A; Idm: -15A; 740mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.4A Pulsed drain current: -15A Power dissipation: 0.74W Case: TSOT26 Gate-source voltage: ±10V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
|||||
 |
DMP2110UVT-13 | Hersteller : Diodes Incorporated |
MOSFET 20V P-CH MOSFET |
Produkt ist nicht verfügbar |
|||||
|
|
DMP2110UVT-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.4A; Idm: -15A; 740mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.4A Pulsed drain current: -15A Power dissipation: 0.74W Case: TSOT26 Gate-source voltage: ±10V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |