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DMP3026SFDE-13

DMP3026SFDE-13 Diodes Incorporated

DMP3026SFDE.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 10.4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1204 pF @ 15 V
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.23 EUR
50000+ 0.22 EUR
Mindestbestellmenge: 10000
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Technische Details DMP3026SFDE-13 Diodes Incorporated

Description: MOSFET P-CH 30V 10.4A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type E), Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1204 pF @ 15 V.

Weitere Produktangebote DMP3026SFDE-13 nach Preis ab 0.23 EUR bis 0.77 EUR

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Preis ohne MwSt
DMP3026SFDE-13 DMP3026SFDE-13 Hersteller : Diodes Incorporated DIOD_S_A0009865625_1-2543388.pdf MOSFETs MOSFET BVDSS: 25V-30V
auf Bestellung 5582 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.75 EUR
10+ 0.65 EUR
100+ 0.45 EUR
500+ 0.35 EUR
1000+ 0.26 EUR
2500+ 0.24 EUR
10000+ 0.23 EUR
Mindestbestellmenge: 4
DMP3026SFDE-13 DMP3026SFDE-13 Hersteller : Diodes Incorporated DMP3026SFDE.pdf Description: MOSFET P-CH 30V 10.4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1204 pF @ 15 V
auf Bestellung 59936 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
27+ 0.67 EUR
100+ 0.46 EUR
500+ 0.36 EUR
1000+ 0.29 EUR
2000+ 0.26 EUR
5000+ 0.25 EUR
Mindestbestellmenge: 23
DMP3026SFDE-13 Hersteller : DIODES INCORPORATED DMP3026SFDE.pdf DMP3026SFDE-13 SMD P channel transistors
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