DMP3035LSS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 20 V
auf Bestellung 115000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.34 EUR |
| 5000+ | 0.32 EUR |
| 12500+ | 0.3 EUR |
| 25000+ | 0.29 EUR |
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Technische Details DMP3035LSS-13 Diodes Incorporated
Description: MOSFET P-CH 30V 11A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 30.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 20 V.
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Preis ohne MwSt |
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DMP3035LSS-13 | Hersteller : Diodes Incorporated |
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auf Bestellung 1995 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3035LSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8A; Idm: -80A; 2W; SO8 Kind of package: reel; tape Drain-source voltage: -30V Drain current: -8A On-state resistance: 36mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Gate charge: 30.7nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -80A Mounting: SMD Case: SO8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP3035LSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8A; Idm: -80A; 2W; SO8 Kind of package: reel; tape Drain-source voltage: -30V Drain current: -8A On-state resistance: 36mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Gate charge: 30.7nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -80A Mounting: SMD Case: SO8 |
Produkt ist nicht verfügbar |