Technische Details DMP26M1UFG-13 Diodes Inc
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W, Mounting: SMD, Case: PowerDI3333-8, Kind of package: reel; tape, Pulsed drain current: -110A, Drain-source voltage: -20V, Drain current: -56A, On-state resistance: 17mΩ, Type of transistor: P-MOSFET, Power dissipation: 3W, Polarisation: unipolar, Gate charge: 164nC, Kind of channel: enhanced, Gate-source voltage: ±10V, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote DMP26M1UFG-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMP26M1UFG-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: -110A Drain-source voltage: -20V Drain current: -56A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 3W Polarisation: unipolar Gate charge: 164nC Kind of channel: enhanced Gate-source voltage: ±10V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP26M1UFG-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Pulsed drain current: -110A Drain-source voltage: -20V Drain current: -56A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 3W Polarisation: unipolar Gate charge: 164nC Kind of channel: enhanced Gate-source voltage: ±10V |
Produkt ist nicht verfügbar |