DMP21D6UFB4-7B Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 20V 580MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 100mA, 4.5V
Power Dissipation (Max): 510mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 46.1 pF @ 10 V
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 31+ | 0.58 EUR |
| 39+ | 0.45 EUR |
| 100+ | 0.27 EUR |
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Technische Details DMP21D6UFB4-7B Diodes Incorporated
Description: MOSFET P-CH 20V 580MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 580mA (Ta), Rds On (Max) @ Id, Vgs: 1Ohm @ 100mA, 4.5V, Power Dissipation (Max): 510mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 46.1 pF @ 10 V.
Weitere Produktangebote DMP21D6UFB4-7B nach Preis ab 0.13 EUR bis 0.59 EUR
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DMP21D6UFB4-7B | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V |
auf Bestellung 9210 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP21D6UFB4-7B | Hersteller : Diodes Inc |
20V P-CHANNEL ENHANCEMENT MODE MOSFET |
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| DMP21D6UFB4-7B | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -810mA; Idm: -5A; 980mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -810mA Pulsed drain current: -5A Power dissipation: 0.98W Case: X2-DFN1006-3 Gate-source voltage: ±8V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP21D6UFB4-7B | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 580MA 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 580mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 100mA, 4.5V Power Dissipation (Max): 510mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 46.1 pF @ 10 V |
Produkt ist nicht verfügbar |
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| DMP21D6UFB4-7B | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -810mA; Idm: -5A; 980mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -810mA Pulsed drain current: -5A Power dissipation: 0.98W Case: X2-DFN1006-3 Gate-source voltage: ±8V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |