DMN1150UFB-7B Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 12V 1.41A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.41A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 106 pF @ 10 V
auf Bestellung 240000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.1 EUR |
| 50000+ | 0.084 EUR |
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Technische Details DMN1150UFB-7B Diodes Incorporated
Description: MOSFET N-CH 12V 1.41A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.41A (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X1-DFN1006-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 106 pF @ 10 V.
Weitere Produktangebote DMN1150UFB-7B nach Preis ab 0.097 EUR bis 0.7 EUR
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DMN1150UFB-7B | Hersteller : Diodes Incorporated |
MOSFET N-CH MOSFET 12V |
auf Bestellung 19099 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1150UFB-7B | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 12V 1.41A 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.41A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 106 pF @ 10 V |
auf Bestellung 257659 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN1150UFB-7B | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 1.15A; Idm: 7A; 300mW Mounting: SMD Case: X1-DFN1006-3 Kind of package: reel; tape Power dissipation: 0.3W Drain-source voltage: 12V Drain current: 1.15A On-state resistance: 0.21Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 1.5nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: 7A Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMN1150UFB-7B | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 1.15A; Idm: 7A; 300mW Mounting: SMD Case: X1-DFN1006-3 Kind of package: reel; tape Power dissipation: 0.3W Drain-source voltage: 12V Drain current: 1.15A On-state resistance: 0.21Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 1.5nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: 7A |
Produkt ist nicht verfügbar |