DMN12M7UCA10-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 20.2A X4-DSN3015-10
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 20.2A (Ta)
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 1.11mA
Supplier Device Package: X4-DSN3015-10
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.54 EUR |
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Technische Details DMN12M7UCA10-7 Diodes Incorporated
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 12V; 10.8A; Idm: 80A; 1.73W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 12V, Drain current: 10.8A, Pulsed drain current: 80A, Power dissipation: 1.73W, Case: X4-DSN3015-10, Gate-source voltage: ±8V, On-state resistance: 6.1mΩ, Mounting: SMD, Gate charge: 35.7nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 5000 Stücke.
Weitere Produktangebote DMN12M7UCA10-7 nach Preis ab 0.55 EUR bis 1.54 EUR
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DMN12M7UCA10-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 20.2A X4-DSN3015-10 Packaging: Cut Tape (CT) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 20.2A (Ta) Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1.11mA Supplier Device Package: X4-DSN3015-10 |
auf Bestellung 9670 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN12M7UCA10-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V X4-DSN3015-10 T&R 5K |
auf Bestellung 4910 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN12M7UCA10-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 10.8A; Idm: 80A; 1.73W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 12V Drain current: 10.8A Pulsed drain current: 80A Power dissipation: 1.73W Case: X4-DSN3015-10 Gate-source voltage: ±8V On-state resistance: 6.1mΩ Mounting: SMD Gate charge: 35.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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| DMN12M7UCA10-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 10.8A; Idm: 80A; 1.73W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 12V Drain current: 10.8A Pulsed drain current: 80A Power dissipation: 1.73W Case: X4-DSN3015-10 Gate-source voltage: ±8V On-state resistance: 6.1mΩ Mounting: SMD Gate charge: 35.7nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |