DMG6898LSD-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 20V 9.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.28W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A
Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 235000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.36 EUR |
| 5000+ | 0.34 EUR |
| 12500+ | 0.32 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMG6898LSD-13 Diodes Incorporated
Description: MOSFET 2N-CH 20V 9.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.28W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 9.5A, Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V, Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote DMG6898LSD-13 nach Preis ab 0.4 EUR bis 0.98 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMG6898LSD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 9.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.28W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.5A Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 237999 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
DMG6898LSD-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET N-CHAN |
auf Bestellung 41864 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
DMG6898LSD-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8 Polarisation: unipolar On-state resistance: 23mΩ Kind of package: reel; tape Drain current: 7.1A Drain-source voltage: 20V Case: SO8 Gate charge: 26nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 30A Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 1.28W Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
DMG6898LSD-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8 Polarisation: unipolar On-state resistance: 23mΩ Kind of package: reel; tape Drain current: 7.1A Drain-source voltage: 20V Case: SO8 Gate charge: 26nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 30A Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 1.28W |
Produkt ist nicht verfügbar |