DMG3402LQ-13 Diodes Incorporated
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Description: MOSFET N-CH 30V 4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.17 EUR |
30000+ | 0.16 EUR |
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Technische Details DMG3402LQ-13 Diodes Incorporated
Description: MOSFET N-CH 30V 4A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V, Power Dissipation (Max): 1.4W, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: SOT-23-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 464 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote DMG3402LQ-13 nach Preis ab 0.16 EUR bis 0.72 EUR
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DMG3402LQ-13 | Hersteller : Diodes Incorporated |
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auf Bestellung 9750 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG3402LQ-13 | Hersteller : Diodes Inc |
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DMG3402LQ-13 | Hersteller : Diodes Zetex |
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DMG3402LQ-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Application: automotive industry Power dissipation: 1.4W Polarisation: unipolar Gate charge: 11.7nC Kind of channel: enhanced Gate-source voltage: ±12V Drain-source voltage: 30V Drain current: 4A On-state resistance: 85mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMG3402LQ-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Application: automotive industry Power dissipation: 1.4W Polarisation: unipolar Gate charge: 11.7nC Kind of channel: enhanced Gate-source voltage: ±12V Drain-source voltage: 30V Drain current: 4A On-state resistance: 85mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |